A 50-nm-gate-length erbium-silicided n-type Schottky barrier metal-oxide-semiconductor field-effect transistor

Moongyu Jang; Yarkyeon Kim, R.; Jaeheon Shin, R.; Seongjae Lee; Park, Kyoungwan
February 2004
Applied Physics Letters;2/2/2004, Vol. 84 Issue 5, p741
Academic Journal
The theoretical and experimental current–voltage characteristics of 50-nm-gate-length erbium-silicided n-type Schottky barrier metal-oxide-semiconductor field-effect transistors (SB-MOSFETs) are discussed. The manufactured 50-nm-gate-length n-type SB-MOSFET shows large on/off current ratio with low leakage current less than 10[sup -4] μA/μm. The saturation current is 120 μA/μm when drain and gate voltage is 1 and 3 V, respectively. The experimental current–voltage characteristics of 50-nm-gate-length n-type SB-MOSFET are fitted using newly developed theoretical model. From the theoretical analysis, the off- and on-current is mainly attributed to the thermionic and tunneling current, respectively. The decrease of tunneling distance at silicon/silicide Schottky junction with the increase of drain voltage gives the increase of tunneling current. This phenomenon is explained by using drain-induced Schottky barrier thickness thinning effect. © 2004 American Institute of Physics.


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