Colossal magnetoresistive manganite-based ferroelectric field-effect transistor on Si

T. Zhao, Kyung-Ho; S. B. Ogale, Kyung-Ho; S. R. Shinde, Kyung-Ho; R. Ramesh; R. Droopad, Kyung-Ho; J. Yu; K. Eisenbeiser, Kyung-Ho; J. Misewich, Kyung-Ho
February 2004
Applied Physics Letters;2/2/2004, Vol. 84 Issue 5, p750
Academic Journal
An all-perovskite ferroelectric field-effect transistor with a ferroelectric Pb(Zr[sub 0.2]Ti[sub 0.8])O[sub 3] (PZT) gate and a colossal magnetoresistive La[sub 0.8]Ca[sub 0.2]MnO[sub 3] (LCMO) channel has been successfully fabricated by pulsed-laser deposition on Si. A clear and square channel resistivity hysteresis loop, commensurate with the ferroelectric hysteresis loop of PZT, is observed. A maximum modulation of 20% after an electric field poling of 1.5×10[sup 5] V/cm, and 50% under a magnetic field of 1 T, are achieved near the metal-insulator transition temperature of the LCMO channel. A data retention time of at least one day is measured. The effects of electric and magnetic fields on the LCMO channel resistance are discussed within the framework of phase separation scenario. © 2004 American Institute of Physics.


Related Articles

  • Coercivity enhancement in the SrRuO3/SrMnO3 superlattices. Padhan, P.; Prellier, W. // Applied Physics Letters;6/26/2006, Vol. 88 Issue 26, p263114 

    Magnetic superlattices consisting of ferromagnetic SrRuO3 and antiferromagnetic SrMnO3 have been grown on (001)-oriented SrTiO3 substrates using the pulsed laser deposition technique. Zero-field-cooled and field-cooled out-of-plane hysteresis loops with different range of magnetic fields have...

  • Reduced leakage current in BiFeO3 thin films with rectifying contacts. Yao Shuai; Shengqiang Zhou; Streit, Stephan; Reuther, Helfried; Bürger, Danilo; Slesazeck, Stefan; Mikolajick, Thomas; Helm, Manfred; Schmidt, Heidemarie // Applied Physics Letters;6/6/2011, Vol. 98 Issue 23, p232901 

    BiFeO3 thin films were grown on Pt/c-sapphire substrates by pulsed laser deposition with different growth rates. With increasing growth rate the leakage current is decreased and the conduction mechanism changes from bulk-limited Poole-Frenkel emission to interface-limited Schottky emission. In...

  • Concentration dependence of drift and magnetoresistance ballistic mobility in a scaled-down metal-oxide semiconductor field-effect transistor. Arora, Vijay K.; Abidin, Mastura Shafinaz Zainal; Tembhurne, Saurabh; Riyadi, Munawar A. // Applied Physics Letters;8/8/2011, Vol. 99 Issue 6, p063106 

    The degradation of ballistic mobility in a metal-oxide semiconductor field-effect transistor is attributed to the nonstationary ballistic injection from the contacts as the length of a channel shrinks to the length smaller than the scattering-limited mean free path. Apparent contradiction...

  • Characterization upon potential properties of HfO2 stabilized by Y2O3 films as cubic phase. Shi, Lei; Zhou, Yue; Yin, Jiang; Liu, Zhiguo // Journal of Applied Physics;Jan2010, Vol. 107 Issue 1, p014104 

    In this article, we have experimentally investigated the nanometer thick cubic HfO2 stabilized with 6 mol % Y2O3 (YSH) films deposited by pulsed laser deposition method in detail. Except the excellent dielectric properties, including a significant increase in dielectric constant as high as 27.2,...

  • Exchange bias and enhanced coercivity in phase separated La0.45Sr0.55MnO3 and Pr0.55(Ca0.65S0.35)0.45MnO3 films. Kim, Byeong-geon; Kumar, Ashvani; Ki, Sanghoon; Kim, Sangwoo; Dho, Joonghoe // Journal of Applied Physics;Dec2011, Vol. 110 Issue 12, p123907 

    An epitaxial La0.45Sr0.55MnO3 (LSMO) film, which has a paramagnetic-to-ferromagnetic transition at ∼260 K and a partial ferromagnetic-to-antiferromagnetic transition at ∼150 K upon cooling, was synthesized on (001) (La0.18Sr0.82)(Al0.59Ta0.41)O3 with pulsed laser deposition. The x-ray...

  • Interface dominated biferroic La0.6Sr0.4MnO3/0.7Pb(Mg1/3Nb2/3)O3–0.3PbTiO3 epitaxial superlattices. Roy Chaudhuri, Ayan; Ranjith, R.; Krupanidhi, S. B.; Mangalam, R. V. K.; Sundaresan, A. // Applied Physics Letters;3/19/2007, Vol. 90 Issue 12, p122902 

    Superlattices composed of ferromagnetic La0.6Sr0.4MnO3 and ferroelectric 0.7Pb(Mg1/3Nb2/3)O3–0.3(PbTiO3) layers were fabricated on (100) LaAlO3 substrates by pulsed laser deposition technique. The ferromagnetic and frequency independent ferroelectric hysteresis characteristics established...

  • The influence of static-electric field on the transport properties in La0.7Ca0.3MnO3 epitaxial thin films. Hu, F. X.; Gao, J. // Journal of Applied Physics;4/15/2006, Vol. 99 Issue 8, p08Q314 

    We investigated the effect of static-electric field on the transport properties in La0.7Ca0.3MnO3 (LCMO) epitaxial thin films using a field effect configuration (FEC). A single layer LCMO film with thickness about 100 nm was grown on LaAlO3 (LAO) substrate by pulsed laser deposition technique. A...

  • Impact of Tuning Molar Ratio in the Starting Materials: Magneto-Transport Features of Hybrid YSrRuCuO. Balamurugan, S. // Journal of Superconductivity & Novel Magnetism;Jul2011, Vol. 24 Issue 5, p1633 

    The impact of slightly tuning molar ratio in the starting materials on the physical properties of 1212-type rutheno-cuprate, YSrRuCuO (nominal) samples prepared under four synthesis approaches are reported. Interestingly, all samples clearly show the differences in the physical properties of the...

  • Electric resistance and magnetoresistance of 30-nm-Thick La0.67Ca0.33MnO3 films elastically compressed in the (110) plane. Boikov, Yu. A.; Volkov, M. P. // Technical Physics Letters;Nov2008, Vol. 34 Issue 11, p974 

    We have studied the structure, electric resistance, and magnetoresistance of 30-nm-thick (110)La0.67Ca0.33MnO3 (LCMO) films grown by laser deposition on (001)-oriented LaAlO3 substrates. The unit cell parameters a and b (along the [100] and [010]LCMO axes, respectively) of these manganite films...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics