Low temperature deposited Ba[sub 0.96]Ca[sub 0.04]Ti[sub 0.84]Zr[sub 0.16]O[sub 3] thin films on Pt electrodes by radio frequency magnetron sputtering

Cramer, N.; Philoisky, Elliot; Kammerdiner, Lee; Kalkur, T. S.
February 2004
Applied Physics Letters;2/2/2004, Vol. 84 Issue 5, p771
Academic Journal
Ba[sub 0.96]Ca[sub 0.04]Ti[sub 0.84]Zr[sub 0.16]O[sub 3] films acceptor doped with Sc were deposited on Pt/TiO[sub 2]/SiO[sub 2]/Si substrates using radio frequency magnetron sputtering. Substrate temperatures throughout the fabrication process remained at or below 450 °C, which allows this process to be compatible with many materials commonly used in integrated circuit manufacturing. In addition, this process made no use of oxygen in the sputter gas or in annealing atmospheres and thus it remains compatible with easily oxidized materials. A relative dielectric constant of 166 was achieved along with a loss tangent of 1.9% at 100 kHz. Leakage current densities of 1.6×10[sup -8] A/cm[sup 2] were observed at 300 K with 300 kV/cm of applied electric field. © 2004 American Institute of Physics.


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