GaInP[sub 2] overgrowth and passivation of colloidal InP nanocrystals using metalorganic chemical vapor deposition

Hanna, M. C.; Mióió, O. I.; Seong, M. J.; Ahrenkiel, S. P.; Nedeljković, J. M.; Nozik, A. J.
February 2004
Applied Physics Letters;2/2/2004, Vol. 84 Issue 5, p780
Academic Journal
We have used metalorganic chemical vapor deposition to deposit thin GaInP[sub 2] passivating films on both isolated and close-packed arrays of colloidal InP/GaInP[sub 2] core-shell nanocrystals. Conformal GaInP[sub 2] layers of 10–20 nm were grown on the nanocrystals after organic capping molecule removal by a thermal annealing treatment. We show that the InP nanocrystals retain their crystallinity, shape and luminescence efficiency after being exposed to growth temperatures of 600 °C. The GaInP[sub 2] nanocrystal composite showed strong photoluminescences indicating effective passivation of surface states. In close-packed nanocrystal arrays, the emission band is redshifted compared to films of isolated nanocrystals indicating electron coupling between dots embedded in GaInP[sub 2]. © 2004 American Institute of Physics.


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