Manganese-doped ZnO nanobelts for spintronics

Ronning, C.; Gao, P. X.; Ding, Y.; Wang, Z. L.; Schwen, D.
February 2004
Applied Physics Letters;2/2/2004, Vol. 84 Issue 5, p783
Academic Journal
Zinc oxide (ZnO) nanobelts synthesized by thermal evaporation have been ion implanted with 30 keV Mn[sup +] ions. Both transmission electron microscopy and photoluminescence investigations show highly defective material directly after the implantation process. Upon annealing to 800 °C, the implanted Mn remains in the ZnO nanobelts and the matrix recovers both in structure and luminescence. The produced high-quality ZnO:Mn nanobelts are potentially useful for spintronics. © 2004 American Institute of Physics.


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