TITLE

Excitons and surface luminescence of CdS nanoribbons

AUTHOR(S)
K. M. Ip, M. S.; C. R. Wang, M. S.; Quan Li; Hark, S. K.
PUB. DATE
February 2004
SOURCE
Applied Physics Letters;2/2/2004, Vol. 84 Issue 5, p795
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The morphology and optical properties of CdS nanoribbons were studied by transmission electron microscopy and photoluminescence spectroscopy. The wurtzite-structured nanoribbons have a uniform rectangular cross section and grow along the [120] crystallographic direction. They are enclosed by small indice surfaces and have a highly perfect crystalline interior, free of extended defects. Luminescence peaks assigned to free and bound excitons were observed from these nanoribbons at low temperatures. In addition, a surface related luminescence band was also identified, showing that the proximity of unpassivated surfaces does not lead to dissociation of excitons in CdS nanoribbons of high purity and structural quality, even when their thickness is around 20 nm. © 2004 American Institute of Physics.
ACCESSION #
12063193

 

Related Articles

  • Mercury cadmium telluride resonant-cavity-enhanced photoconductive infrared detectors. Wehner, J. G. A.; Musca, C. A.; Sewell, R. H.; Dell, J. M.; Faraone, L. // Applied Physics Letters;11/21/2005, Vol. 87 Issue 21, p211104 

    Resonant-cavity-enhanced Hg1-xCdxTe photoconductive detectors for midwave infrared wavelengths are investigated for use in multi- and hyper-spectral sensor systems. Resonant-cavity-enhanced performance is modeled, and compared with measured performance of fabricated devices. The responsivity of...

  • Improved visible photoluminescence from porous silicon with surface Si–Ag bonds. Sun, J.; Lu, Y. W.; Du, X. W.; Kulinich, S. A. // Applied Physics Letters;4/25/2005, Vol. 86 Issue 17, p171905 

    Porous silicon with surface Si–Ag bonds was prepared by a two-step method combining chemical etching and electrochemical anodization. The microstructure was analyzed by scanning electron microscopy, and the bond structure was evaluated by energy dispersion spectroscopy and Fourier...

  • Effect of cap-layer growth rate on morphology and luminescence of InAs/InP(001) quantum dots grown by metal-organic vapor phase epitaxy. Michon, A.; Sagnes, I.; Patriarche, G.; Beaudoin, G.; Mérat-Combes, M. N.; Saint-Girons, G. // Journal of Applied Physics;8/1/2006, Vol. 100 Issue 3, p033508 

    This work reports on the influence of the InP cap-layer growth rate on the structural and optical properties of InAs/InP quantum dots (QDs) grown by metal-organic vapor phase epitaxy. A careful correlation between the structural and optical properties of the QDs completed by a modeling of their...

  • Enhancement of phase separation in the InGaN layer for self-assembled In-rich quantum dots. Il-Kyu Park; Min-Ki Kwon; Sung-Ho Baek; Young-Woo Ok; Tae-Yeon Seong; Seong-Ju Park; Yoon-Seok Kim; Yong-Tae Moon; Dong-Joon Kim // Applied Physics Letters;8/8/2005, Vol. 87 Issue 6, p061906 

    The enhancement of phase separation in the InGaN layer grown on a GaN layer with a rough surface was investigated for the formation of self-assembled In-rich quantum dots (QDs) in the InGaN layer. Transmission electron microscopy images showed that In-rich QDs with a size of 2–5 nm were...

  • Influence of dislocations on photoluminescence of InGaN/GaN multiple quantum wells. Zhang, J. C.; Jiang, D. S.; Sun, Q.; Wang, J. F.; Wang, Y. T.; Liu, J. P.; Chen, J.; Jin, R. Q.; Zhu, J. J.; Yang, H.; Dai, T.; Jia, Q. J. // Applied Physics Letters;8/15/2005, Vol. 87 Issue 7, p071908 

    The influence of dislocations on photoluminescence (PL) of InGaN/GaN multiple quantum wells (MQWs) is investigated by triple-axis x-ray diffraction (TAXRD), transmission electron microscopy (TEM), and PL spectra. The ω scan of every satellite peak by TAXRD is adopted to evaluate the mean...

  • Low-temperature upconversion spectroscopy of nanosized Y2O3:Er,Yb phosphor. Pires, Ana Maria; Serra, Osvaldo Antonio; Heer, Stephan; Güdel, Hans Ulrich // Journal of Applied Physics;9/15/2005, Vol. 98 Issue 6, p063529 

    This work reports on the structural characterization and on the low-temperature upconversion spectroscopy of the Y2O3:2%Er,1%Yb nanophosphor prepared by thermal decomposition of a polymeric resin (Pechini’s method [U.S. Patent No. 3,330,697 (July 11 1967)]). The average particle size...

  • Controlled catalytic growth and characterization of zinc oxide nanopillars on a-plane sapphire. Reiser, A.; Ladenburger, A.; Prinz, G. M.; Schirra, M.; Feneberg, M.; Langlois, A.; Enchelmaier, R.; Li, Y.; Sauer, R.; Thonke, K. // Journal of Applied Physics;3/1/2007, Vol. 101 Issue 5, p054319 

    Using the vapor-liquid-solid (VLS) technique, we have grown well-aligned nanopillars on [formula]-sapphire (a-plane) substrates at atmospheric pressure in a horizontal tube furnace employing gold catalyst seeds of different sizes and densities. It was the aim of the present work to find...

  • Polytype transition of N-face GaN:Mg from wurtzite to zinc-blende. Monroy, E.; Hermann, M.; Sarigiannidou, E.; Andreev, T.; P.Holliger; Monnove, S.; Mank, H.; Daudin, B.; Eickhoff, M. // Journal of Applied Physics;10/1/2004, Vol. 96 Issue 7, p3709 

    We have investigated the polytype conversion of a GaN film from N-face wurtzite (2H—) to zinc-blende (3C—) structure due to Mg doping during growth by plasma-assisted molecular-beam epitaxy. Structural analysis by high-resolution transmission electron microscopy and high-resolution...

  • Growth and enhanced light emission of hybrid structures of ZnO/Si nanocrystals. Sung Kim; Chang Oh Kim; Sung Won Hwang; Suk-Ho Choi // Applied Physics Letters;6/16/2008, Vol. 92 Issue 24, p243108 

    Hybrid nanostructures composed of ZnO nanocrystals (NCs) and Si NCs have been fabricated by annealing double layers of ZnO and SiOx on Si (100) wafer at 1100 °C for 20 min. High-resolution transmission electron microscopy images demonstrate the coexistence of 4–5 nm ZnO NCs and...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics