TITLE

Infrared spectroscopic analysis of an ordered Si/SiO[sub 2] interface

AUTHOR(S)
Queeney, K. T.; Herbots, N.; Shaw, Justin M.; Atluri, V.; Chabal, Y. J.
PUB. DATE
January 2004
SOURCE
Applied Physics Letters;1/26/2004, Vol. 84 Issue 4, p493
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Infrared spectroscopy is used to compare the Si/SiO[sub 2] interfaces created by thermal oxidation of a standard Si(100) substrate and of an ordered, (1×1) Si(100) substrate. The thermal oxides (approximately 25 Å) examined in this study are etched in dilute hydrofluoric acid and the resulting films analyzed spectroscopically. The behavior of the dominant optical phonon modes as a function of film thickness provides strong evidence that the ordered Si(100) substrate provides a template for an Si/SiO[sub 2] interface with a higher degree of homogeneity in the Si–O bonding environment of the intervening substoichiometric SiO[sub x] layer than does the standard Si(100) substrate. © 2004 American Institute of Physics.
ACCESSION #
12020904

 

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