TITLE

Well-width dependence of photoluminescence emission from a-plane GaN/AlGaN multiple quantum wells

AUTHOR(S)
Craven, M. D.; Waltereit, P.; Speck, J. S.; DenBaars, S. P.
PUB. DATE
January 2004
SOURCE
Applied Physics Letters;1/26/2004, Vol. 84 Issue 4, p496
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
This work investigates the room-temperature photoluminescence (PL) characteristics of nonpolar GaN/(∼100 Å Al[sub 0.16]Ga[sub 0.84]N) multiple quantum wells (MQWs) in comparison to c-plane structures as a function of GaN quantum well width. 10-period a-plane and c-plane MQW structures were simultaneously regrown on the appropriate GaN/sapphire template layers via metalorganic chemical vapor deposition with well widths ranging from 20 to 70 Å. The PL emission energy from a-plane MQWs followed a square well trend modeled using self-consistent Poisson–Schrödinger calculations while the c-plane MQW emission showed a significant redshift with increasing well width which is attributed to the quantum-confined Stark effect. Despite a higher dislocation density, the a-plane MQWs exhibit enhanced recombination efficiency as compared to the c-plane wells since well emission is no longer observed for c-plane wells wider than 50 Å. Optimal PL emission intensity was obtained for 52 Å a-plane wells compared to 28 Å c-plane wells, revealing the effects of internal fields on quantum well emission. © 2004 American Institute of Physics.
ACCESSION #
12020903

 

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