Anisotropic structural characteristics of (1120) GaN templates and coalesced epitaxial lateral overgrown films deposited on (1012) sapphire

Wang, Hongmei; Chen, Changqing; Gong, Zheng; Zhang, Jianping; Gaevski, Mikhail; Su, Ming; Yang, Jinwei; Khan, M. Asif
January 2004
Applied Physics Letters;1/26/2004, Vol. 84 Issue 4, p499
Academic Journal
a-plane GaN templates and coalesced epitaxial lateral overgrown (ELOG) films on r-plane sapphire substrates were investigated by x-ray diffraction (XRD). The a-plane GaN templates were found to have [0001]-oriented stripe-features, which is related to anisotropic mosaicity. For the mosaic blocks, the mosaicity reached the largest and the smallest values along the [1100] and the [0001] directions. The ELOG procedure with the SiO[sub 2] mask stripes perpendicular to the [0001] direction limits the preferable growth along this direction, and thereby enhances the [1100] growth. This leads to large-area, featureless, a-plane GaN films for which the wing tilt and not the fine mosaic block size becomes the major XRD line-broadening mechanism. © 2004 American Institute of Physics.


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