V defects of ZnO thin films grown on Si as an ultraviolet optical path

Yoo, Y.Z.; Sekiguchi, T.; Chikyow, T.; Kawasaki, M.; Onuma, T.; Chichibu, S. F.; Song, J. H.; Koinuma, H.
January 2004
Applied Physics Letters;1/26/2004, Vol. 84 Issue 4, p502
Academic Journal
V defects were observed in the ZnO films epitaxially grown on the ZnS-buffered Si. Although the defects were located on the surface, strong near-bandedge emission confined to the {1011} facets of V defects was observed at room temperature. The near-bandedge emission spreads out over the whole film centering at V defects at 30 K. The detailed optical characterization shows that activation of excitonic absorption is responsible for this unique optical behavior. © 2004 American Institute of Physics.


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