Quantum dot/substrate interaction in InAs/In[sub 0.53]Ga[sub 0.47]As/InP(001)

Liao, X. Z.; Zhu, Y. T.; Qiu, Y. M.; Uhl, D.; H. F. Xu, D.
January 2004
Applied Physics Letters;1/26/2004, Vol. 84 Issue 4, p511
Academic Journal
InAs quantum dots grown on In[sub 0.53]Ga[sub 0.47]As/InP(001) substrate by low-pressure metalorganic chemical vapor deposition were investigated using high-angle annular dark-field imaging. Results suggest significant mass transport of mainly the large-sized component (InAs) from the In[sub 0.53]Ga[sub 0.47]As substrate to InAs quantum dots, an unexpected process that increases the system strain energy. The amount of the transported mass increases with quantum dot size. Two monolayers of GaAs inserted between InAs islands and the InGaAs substrate appears to block or at least effectively slow down this mass transport process. © 2004 American Institute of Physics.


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