Change in the chemical state and thermal stability of HfO[sub 2] by the incorporation of Al[sub 2]O[sub 3]

Cho, M.-H.; Chang, H. S.; Cho, Y. J.; Moon, D. W.; Min, K.-H.; Sinclair, R.; Kang, S. K.; Ko, D.-H.; Lee, J. H.; Gu, J. H.; Lee, N. I.
January 2004
Applied Physics Letters;1/26/2004, Vol. 84 Issue 4, p571
Academic Journal
Al[sub 2]O[sub 3] incorporated HfO[sub 2] films grown by atomic layer deposition were investigated using various measurement tools. The accumulation capacitance of the Al[sub 2]O[sub 3] incorporated into HfO[sub 2] film increases as the postannealing temperature increases because of changes in interfacial and upper layer thickness and in interfacial stoichiometry. The core-level energy state of a 15 Å thick film shows a shift to higher binding energy, as the result of silicate formation and Al[sub 2]O[sub 3] incorporation. The incorporation of Al[sub 2]O[sub 3] into the HfO[sub 2] film has no effect on silicate formation at the interface between the film and Si, while the ionic bonding characteristics and hybridization effects are enhanced compared to a pure HfO[sub 2] film. Any dissociated Al[sub 2]O[sub 3] on the film surface is completely removed by a vacuum annealing treatment over 850 °C, while HfO[sub 2] contributes to Hf silicide formation on the surface of the film. © 2004 American Institute of Physics.


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