TITLE

Change in the chemical state and thermal stability of HfO[sub 2] by the incorporation of Al[sub 2]O[sub 3]

AUTHOR(S)
Cho, M.-H.; Chang, H. S.; Cho, Y. J.; Moon, D. W.; Min, K.-H.; Sinclair, R.; Kang, S. K.; Ko, D.-H.; Lee, J. H.; Gu, J. H.; Lee, N. I.
PUB. DATE
January 2004
SOURCE
Applied Physics Letters;1/26/2004, Vol. 84 Issue 4, p571
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Al[sub 2]O[sub 3] incorporated HfO[sub 2] films grown by atomic layer deposition were investigated using various measurement tools. The accumulation capacitance of the Al[sub 2]O[sub 3] incorporated into HfO[sub 2] film increases as the postannealing temperature increases because of changes in interfacial and upper layer thickness and in interfacial stoichiometry. The core-level energy state of a 15 Å thick film shows a shift to higher binding energy, as the result of silicate formation and Al[sub 2]O[sub 3] incorporation. The incorporation of Al[sub 2]O[sub 3] into the HfO[sub 2] film has no effect on silicate formation at the interface between the film and Si, while the ionic bonding characteristics and hybridization effects are enhanced compared to a pure HfO[sub 2] film. Any dissociated Al[sub 2]O[sub 3] on the film surface is completely removed by a vacuum annealing treatment over 850 °C, while HfO[sub 2] contributes to Hf silicide formation on the surface of the film. © 2004 American Institute of Physics.
ACCESSION #
12020880

 

Related Articles

  • Interfacial reaction between chemically vapor-deposited HfO[sub 2] thin films and a HF-cleaned Si substrate during film growth and postannealing. Park, Byoung Keon; Park, Jaehoo; Cho, Moonju; Hwang, Cheol Seong; Oh, Kiyoung; Han, Youngki; Yang, Doo Young // Applied Physics Letters;4/1/2002, Vol. 80 Issue 13, p2368 

    Interfacial reactions between HfO[sub 2] thin films and a Si substrate during thin-film growth and postannealing under a N[sub 2] atmosphere were investigated by high-resolution transmission electron microscopy, Auger electron spectroscopy, and electrical measurements of...

  • A study of some optical properties of hafnium dioxide (HfO[sub 2] ) thin films and their applications. Fadel, M.; Azim M., O.A.; Omer, O.A.; Basily, R.R. // Applied Physics A: Materials Science & Processing;1998, Vol. 66 Issue 3, p335 

    Abstract. By use of evaporation conditions adjusted for the deposition of hafnium dioxide (HfO2), a series of films ranging in thickness from 50 to 10 000 nm was prepared by using an electron beam gun inside an evacuated coating chamber of pressure 1 x 10[sup -5] mbar. The films were obtained on...

  • Alumina attraction. Ahmed, Waqar // Product Finishing;Apr2000, Vol. 53 Issue 4, p19 

    Discusses the benefits of aluminum oxide coatings as a finishing material. Uses for the coating material; Methods to deposit coatings of aluminum oxide; Description of the impulse plasma deposition technique; Mechanism for the formation of aluminum oxide films.

  • Process-dependent band structure changes of transition-metal (Ti,Zr,Hf) oxides on Si (100). Fulton, C. C.; Lucovsky, G.; Nemanich, R. J. // Applied Physics Letters;1/26/2004, Vol. 84 Issue 4, p580 

    In this study, we have deposited Ti, Zr, and Hf oxides on ultrathin (∼0.5 nm) SiO[sub 2] buffer layers and have identified metastable states which give rise to large changes in their band alignments with respect to the Si substrate. This results in a potential across the interfacial SiO[sub...

  • H-related defect complexes in HfO2: A model for positive fixed charge defects. Joongoo Kang; Lee, E.-C.; Chang, K.J.; Young-Gu Jin // Applied Physics Letters;5/10/2004, Vol. 84 Issue 19, p3894 

    Based on first-principles theoretical calculations, we investigate the hydrogenation effect on the defect properties of oxygen vacancies (VO) in HfO2. A defect complex of VO and H behaves as a shallow donor for a wide range of Fermi levels, with a positive charge state, and this complex is...

  • Effect of growth temperature and postmetallization annealing on the interface and dielectric quality of atomic layer deposited HfO2 on p and n silicon. Dueñas, S.; Castán, H.; García, H.; Barbolla, J.; Kukli, K.; Aarik, J. // Journal of Applied Physics;8/1/2004, Vol. 96 Issue 3, p1365 

    The effect of growth temperature and postmetallization annealing on the electrical characteristics of atomic layer deposited HfO2 films has been studied. Trap distributions at the interface have been obtained by means of deep level transient spectroscopy, whereas conductance transient technique...

  • Textured crystallization of ultrathin hafnium oxide films on silicon substrate. Bohra, Fakhruddin; Jiang, Bin; Zuo, Jian-Min // Applied Physics Letters;4/16/2007, Vol. 90 Issue 16, p161917 

    The effects of rapid thermal annealing are reported here on the structure of 2 nm thick hafnium oxide films grown on silicon (100) substrates. The films grown by atomic layer deposition have a 1 nm SiO2 transition layer between silicon and the HfO2 layer. The amorphous structure of the...

  • Towards controllable optical response of GaN quantum dots in alumina. Maurizio, C.; Mattei, G.; Garcia, M.A.; Borsella, E.; Mazzoldi, P.; Quaranta, A.; D'Acapito, F. // European Physical Journal D -- Atoms, Molecules, Clusters & Opti;Jul2003, Vol. 25 Issue 1, p25 

    GaN nanocrystals (in the wurtzite phase) have been synthesized by thermal annealing in reducing atmosphere of Ga++N+ sequentially implanted alumina. We show that the reduction of Ga local concentration (by lowering the implantation dose) yields to an overall increase in the intensity of the GaN...

  • Formation of Ti[sup 3+] in sapphire by co-implantation of Ti and O ions. Morpeth, L. D.; Morpeth, L.D.; McCallum, J. C.; McCallum, J.C. // Applied Physics Letters;1/24/2000, Vol. 76 Issue 4 

    We have demonstrated that co-implantation of Ti and O ions into c-axis oriented α-Al[sub 2]O[sub 3] substrates followed by thermal annealing can substantially increase the fraction of Ti ions present in the optically active 3+ oxidation state. Evidence for the presence of Ti[sup 3+] is given...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics