Anisotropic in-plane strains and dielectric properties in (Pb,Sr)TiO[sub 3] thin films on NdGaO[sub 3] substrates

Lina, Y.; Chen, X.; Liu, S. W.; Chen, C. L.; Lee, Jang-sik; Li, Y.; Jia, Q. X.; Bhalla, A.
January 2004
Applied Physics Letters;1/26/2004, Vol. 84 Issue 4, p577
Academic Journal
Anisotropic in-plane strain can be induced in (Pb,Sr)TiO[sub 3] (PST) thin film by using orthorhombic NdGaO[sub 3] (110) as a substrate. High-resolution x-ray diffraction was used to measure the strain of the PST thin film. A rocking curve with full width at half maximum of ∼0.04° illustrated that the film had nearly perfect single-crystalline quality. Reciprocal space maps around the (001), (103), and (013) reflections of the PST film revealed anisotropic in-plane strain of 485 ppm along [100] and 26 ppm along [010], respectively. Coplanar capacitance measurements also showed systematic changes in the dielectric constant and tunability due to strain; about a 15% difference in tunability at surface field of 50 kV/cm and a 20% difference in the zero-field dielectric constant were observed along [100] and [010], respectively. © 2004 American Institute of Physics.


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