Formation and optical properties of CdTe self-assembled quantum rings with electronic states embedded in ZnTe barriers

Kim, T.W.; Lee, E. H.; Lee, K. H.; Kim, J. S.; Park, H. L.
January 2004
Applied Physics Letters;1/26/2004, Vol. 84 Issue 4, p595
Academic Journal
Atomic force microscopy (AFM) measurements were carried out to investigate the structural properties of CdTe/ZnTe quantum rings (QRs), and photoluminescence (PL) measurements were performed to determine the electron activation energy. The AFM images showed that uniform CdTe QRs were formed on ZnTe buffer layers. While the excitonic peak corresponding to the transition from the ground electronic subband to the ground heavy-hole band (E[sub 1]–HH[sub 1]) in the CdTe/ZnTe QRs was shifted to higher energy in comparison with that in CdTe/ZnTe quantum wires and quantum wells, it was shifted to lower energy in comparison with that in CdTe/ZnTe quantum dots. The activation energy of the electrons confined in the CdTe QRs, as obtained from the temperature-dependent PL spectra, was higher than those in CdTe quantum wires and quantum wells and smaller than that in CdTe quantum dots. The present results can help improve understanding of the formation and optical properties of the CdTe QRs grown on ZnTe buffer layers. © 2004 American Institute of Physics.


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