Mechanism for bistability in organic memory elements

Bozano, L. D.; Kean, B. W.; Deline, V. R.; Salem, J. R.; Scott, J. C.
January 2004
Applied Physics Letters;1/26/2004, Vol. 84 Issue 4, p607
Academic Journal
We demonstrate that the resistive switching phenomenon observed in organic semiconductor layers containing granular metal particles conforms to a charge storage mechanism described by Simmons and Verderber [Proc. R. Soc. A 391, 77 (1967)]. The space-charge field due to the stored charge inhibits further charge injection from the electrodes. The equilibrium current–voltage curve is N shaped and the low and high resistance states are obtained by applying voltage close to the local maximum and minimum, respectively. © 2004 American Institute of Physics.


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