TITLE

Reduced 1/f noise in p-Si[sub 0.3]Ge[sub 0.7] metamorphic metal–oxide–semiconductor field-effect transistor

AUTHOR(S)
Myronov, M.; O. A. Mironov, M.; S. Durov, M.; T. E. Whall, M.; E. H. C. Parker; T. Hackbarth, M.; G. Höck, M.; H.-J. Herzog, M.; U. König, M.
PUB. DATE
January 2004
SOURCE
Applied Physics Letters;1/26/2004, Vol. 84 Issue 4, p610
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have demonstrated reduced 1/f low-frequency noise in sub-μm metamorphic high Ge content p-Si[sub 0.3]Ge[sub 0.7] metal–oxide–semiconductor field-effect transistors (MOSFETs) at 293 K. Three times lower normalized power spectral density (NPSD) S[sub I[sub D]]/I[sub D][sup 2] of drain current fluctuations over the 1–100 Hz range at V[sub DS]=-50 mV and V[sub G]-V[sub th]=-1.5 V was measured for a 0.55 μm effective gate length p-Si[sub 0.3]Ge[sub 0.7] MOSFET compared with a p-Si MOSFET. Performed quantitative analysis clearly demonstrates the importance of carrier number fluctuations and correlated mobility fluctuations (CMFs) components of 1/f noise for p-Si surface channel MOSFETs, and the absence of CMFs for p-Si[sub 0.3]Ge[sub 0.7] buried channel MOSFETs. This explains the reduced NPSD for p-Si[sub 0.3]Ge[sub 0.7] MOSFETs in strong inversion. © 2004 American Institute of Physics.
ACCESSION #
12020868

 

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