TITLE

Quantifying boron and phosphorous dopant concentrations in silicon from photoluminescence spectroscopy at 79 K

AUTHOR(S)
Liu, AnYao; Nguyen, Hieu T.; Macdonald, Daniel
PUB. DATE
November 2016
SOURCE
Physica Status Solidi. A: Applications & Materials Science;Nov2016, Vol. 213 Issue 11, p3029
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Photoluminescence spectroscopy at 79 K is shown to provide an alternative, non-destructive characterisation method for quantifying the boron and phosphorous dopant concentrations in silicon. The dopant concentrations are revealed by the photoluminescence intensity ratios of the dopant-related features to the band-to-band recombination peaks. The intensity ratio is found to be insensitive to the excitation power in a wide range of 0.3 W cm−2-100 kW cm−2. Calibration curves for boron and phosphorous in silicon are presented for [B] below 5 × 1017 cm−3 and [P] below 8 × 1016 cm−3.
ACCESSION #
119477751

 

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