Formation of the single-phase ferromagnetic semiconductor (Ga,Mn)As by pulsed laser annealing

Danilov, Yu.; Boudinov, H.; Vikhrova, O.; Zdoroveyshchev, A.; Kudrin, A.; Pavlov, S.; Parafin, A.; Pitirimova, E.; Yakubov, R.
November 2016
Physics of the Solid State;Nov2016, Vol. 58 Issue 11, p2218
Academic Journal
It is shown that (Ga,Mn)As layers formed by Mn ion implantation into GaAs and subsequent annealing by an excimer laser pulse with an energy density to 200-300 mJ/cm feature the properties of the p-type semiconductor and ferromagnetic properties. The threshold dose of implanted ions (~10 cm) for activating Mn acceptors is determined. The sheet hole concentration and the Curie temperature increase with further increasing Mn ion dose. Hysteresis loops in the magnetic field dependences of the Hall effect, the negative magnetoresistance, and magnetic and structural studies suggest that the layers are analogues of single-phase ferromagnetic compounds (Ga,Mn)As formed by low-temperature molecular beam epitaxy.


Related Articles

  • In[sub 1-x]Mn[sub x]Sb—a narrow-gap ferromagnetic semiconductor. Wojtowicz, T.; Cywinski, G.; Lim, W. L.; Liu, X.; Dobrowolska, M.; Furdyna, J. K.; Yu, K. M.; Walukiewicz, W.; Kim, G. B.; Cheon, M.; Chen, X.; Wang, S. M.; Luo, H. // Applied Physics Letters;6/16/2003, Vol. 82 Issue 24, p4310 

    A narrow-gap ferromagnetic In[SUB1-x]Mn[SUBx]Sb semiconductor alloy was grown by low-temperature molecular-beam epitaxy on CdTe/GaAs hybrid substrates. Ferromagnetic order in In[SUB1-x]Mn[SUBx]Sb was unambiguously established by the observation of clear hysteresis loops both in direct...

  • Photoluminescence of very dilutely C+ ion-implanted GaAs. Makita, Yunosuke; Nomura, Toshio; Yokota, Masaki; Matsumori, Tokue; Izumi, Tomio; Takeuchi, Yoshinori; Kudo, Kazuhiro // Applied Physics Letters;9/15/1985, Vol. 47 Issue 6, p623 

    Very dilute C+ (carbon) ion implantations were carried out for extremely pure GaAs wafers grown by molecular beam epitaxy (MBE). Low-temperature photoluminescence measurements revealed that at least five sharp new emission lines are commonly formed near bound exciton emission region by the...

  • Properties of molecular-beam-epitaxy-grown and O+-implanted GaAs and their application to the formation of a buried collector of an AlGaAs/GaAs heterojunction bipolar transistor. Ota, Y.; Yanagihara, M.; Inada, M. // Journal of Applied Physics;7/15/1988, Vol. 64 Issue 2, p926 

    Investigates the changes in the properties of molecular-beam-epitaxy (MBE) grown gallium arsenide (GaAs) by oxygen-ion implantation and annealing. Crystalline influences of oxygen implantation on GaAs; Kinds of MBE-grown wafers that were used to study the conditions of the oxygen implantation;...

  • Epitaxial ferromagnetic Ï„-MnAl films on GaAs. Sands, T.; Harbison, J. P.; Leadbeater, M. L.; Allen, S. J.; Hull, G. W.; Ramesh, R.; Keramidas, V. G. // Applied Physics Letters;12/10/1990, Vol. 57 Issue 24, p2609 

    We report the growth of epitaxial Ï„-MnAl ferromagnetic films on GaAs substrates by molecular beam epitaxy (MBE). Reflection high-energy electron diffraction and x-ray diffraction show that the Ï„-phase films grow with the c axis of the tetragonal unit cell normal to the {100}GaAs...

  • Ferromagnetic resonance and microstructural studies of Ag/Fe–GaAs waveguide structures. Lee, Chin C.; Wu, W.; Tsai, Chen S. // Journal of Applied Physics;6/1/2002, Vol. 91 Issue 11, p9255 

    We report the growth and characterization of ferromagnetic iron/silver (Ag/Fe) multilayer structures on gallium arsenide (GaAs) (100) substrates by molecular beam epitaxy. The samples have been characterized by x-ray diffraction and ferromagnetic resonance (FMR) techniques. X-ray read-camera...

  • Growth of ferromagnetic semiconductor: (Ga, Cr)As. Yamada, M.; Ono, K.; Mizuguchi, M.; Okabayashi, J.; Oshima, M.; Yuri, M.; Lin, H. J.; Hsieh, H. H.; Chen, C. T.; Akinaga, H. // Journal of Applied Physics;5/15/2002 Part 1, 2 & 3, Vol. 91 Issue 10, p7908 

    A type of GaAs-based ferromagnetic semiconductor, (Ga, Cr)As, was successfully prepared by low-temperature molecular-beam epitaxy. The (Ga, Cr)As thin film shows a flat surface up to the Cr content χ = 0.18. However, when Cr content x exceeded 0.20, the roughness of the film became larger....

  • Molecular-beam-epitaxy-grown CrSe/Fe bilayer on GaAs(100) substrate. Wang, C.; Zhang, B.; You, B.; Lok, S. K.; Chan, S. K.; Zhang, X. X.; Wong, G. K. L.; Sou, I. K. // Journal of Applied Physics;Oct2007, Vol. 102 Issue 8, p083901 

    A novel CrSe/Fe bilayer structure has been fabricated on a GaAs (100) substrate by the molecular beam epitaxy technique. Microstructural characterizations have revealed that the Fe layer is a single-crystalline bcc structure with the orientation relationship of (100)Fe∥(100)GaAs, while the...

  • MBE Growth and Magnetic Properties of Quaternary Magnetic Semiconductor (Cd,Mn,Cr)Te. Ishikawa, Kôichirô; Kuroda, Shinji // AIP Conference Proceedings;12/22/2011, Vol. 1399 Issue 1, p705 

    We have investigated the magnetic properties of a quaternary magnetic semiconductor Cd1-x-yMnxCryTe with a fixed Mn content x∼0.2 and varied Cr contents in the range of y = 0∼0.07. Ferromagnetic behaviors were observed in the films containing even a small amount of Cr less than 1%;...

  • Stoichiometric growth of high Curie temperature heavily alloyed GaMnAs. Mack, S.; Myers, R. C.; Heron, J. T.; Gossard, A. C.; Awschalom, D. D. // Applied Physics Letters;5/12/2008, Vol. 92 Issue 19, p192505 

    Heavily alloyed, 100 nm Ga1-xMnxAs (x>0.1) films are obtained via low-temperature molecular beam epitaxy by utilizing a combinatorial technique which allows systematic control of excess arsenic during growth. Reproducible electronic, magnetic, and structural properties are optimized in a narrow...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics