TITLE

Formation of the single-phase ferromagnetic semiconductor (Ga,Mn)As by pulsed laser annealing

AUTHOR(S)
Danilov, Yu.; Boudinov, H.; Vikhrova, O.; Zdoroveyshchev, A.; Kudrin, A.; Pavlov, S.; Parafin, A.; Pitirimova, E.; Yakubov, R.
PUB. DATE
November 2016
SOURCE
Physics of the Solid State;Nov2016, Vol. 58 Issue 11, p2218
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
It is shown that (Ga,Mn)As layers formed by Mn ion implantation into GaAs and subsequent annealing by an excimer laser pulse with an energy density to 200-300 mJ/cm feature the properties of the p-type semiconductor and ferromagnetic properties. The threshold dose of implanted ions (~10 cm) for activating Mn acceptors is determined. The sheet hole concentration and the Curie temperature increase with further increasing Mn ion dose. Hysteresis loops in the magnetic field dependences of the Hall effect, the negative magnetoresistance, and magnetic and structural studies suggest that the layers are analogues of single-phase ferromagnetic compounds (Ga,Mn)As formed by low-temperature molecular beam epitaxy.
ACCESSION #
119456120

 

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