Carrier lifetime in conductive and vanadium-doped 6H-SiC substrates

Tamulaitis, G.; Yilmaz, I.; Shur, M. S.; Anderson, T.; Gaska, R.
January 2004
Applied Physics Letters;1/19/2004, Vol. 84 Issue 3, p335
Academic Journal
Conductive undoped and semi-insulating vanadium-doped 6H-SiC substrates were studied using the light-induced transient grating technique and photoluminescence (PL) spectroscopy. Carrier lifetime of 400±10 ps and diffusion coefficient of 2.7±0.2 cm[sup 2] s[sup -1] were obtained for the nominally undoped wafer, while the corresponding parameters for the V-doped wafer were estimated to be 130±5 ps and 0.9±0.5 cm[sup 2] s[sup -1], respectively. The peak PL intensity in the vanadium-doped wafers is more than three orders of magnitude lower than that in nominally undoped wafers. Low-temperature cw PL spectra revealed a band peaked at 507 nm, which is caused by V doping. © 2004 American Institute of Physics.


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