Enhanced luminescence of Gd[sub 2]O[sub 3]:Eu[sup 3+] thin-film phosphors by Li doping

Soung-soo Yi, Shinzaburo; Jong Seong Bae, Shinzaburo; Kyoo Sung Shim, Shinzaburo; Jung Hyun Jeong, Shinzaburo; Jung-Chul Park; Holloway, P. H.
January 2004
Applied Physics Letters;1/19/2004, Vol. 84 Issue 3, p353
Academic Journal
Gd[sub 2]O[sub 3]:Eu[sup 3+] and Li-doped Gd[sub 2]O[sub 3]:Eu[sup 3+] luminescent thin films have been grown on Al[sub 2]O[sub 3] (0001) substrates using pulsed-laser deposition. The films grown under different deposition conditions show different microstructural and luminescent characteristics. Both cubic and monoclinic crystalline structures were observed in Gd[sub 2]O[sub 3]:Eu[sup 3+] films, but only the cubic crystalline structure was observed for Li-doped Gd[sub 2]O[sub 3]:Eu[sup 3+] films grown under certain condition. The photoluminescence (PL) brightness data obtained from Li-doped Gd[sub 2]O[sub 3]:Eu[sup 3+] films indicate that sapphire is a promising substrate for growth of high-quality Li-doped Gd[sub 2]O[sub 3]:Eu[sup 3+] thin-film red phosphor. In particular, incorporation of Li[sup +] ions into the Gd[sub 2]O[sub 3] lattice can induce a remarkable increase of PL. The highest emission intensity was observed with LiF-doped Gd[sub 1.84]Li[sub 0.08]Eu[sub 0.08]O[sub 3], whose brightness was a factor of 2.3 larger than that from Gd[sub 2]O[sub 3]:Eu[sup 3+] films. This phosphor is promising for applications in flat-panel displays. © 2004 American Institute of Physics.


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