Germanium-concentration dependence of arsenic diffusion in silicon germanium alloys

Eguchi, S.; Chleirigh, C. N.; Olubuyide, O. O.; Hoyt, J. L.
January 2004
Applied Physics Letters;1/19/2004, Vol. 84 Issue 3, p368
Academic Journal
The germanium-concentration dependence of arsenic diffusion in relaxed silicon germanium (Si[sub 1-x]Ge[sub x]) alloys with Ge content ranging from 0 to 40% has been investigated. Arsenic was implanted into relaxed epitaxial layers at 15 keV to a dose of 3×10[sup 15] cm[sup -2], and diffusion during furnace and rapid thermal annealing was studied. Under equilibrium extrinsic conditions, the arsenic diffusivity increases exponentially with increasing Ge content in Si[sub 1-x]Ge[sub x]. Under transient diffusion conditions, the arsenic diffusivity in Si[sub 1-x]Ge[sub x] is retarded compared to the diffusivity for longer times, while a slight transient enhancement of As diffusion is observed in Si. The degree of transient retardation depends on the germanium concentration in the alloy. © 2004 American Institute of Physics.


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