Pulsed deposition of metal–oxide thin films using dual metal precursors

Conley Jr., J. F.; Ono, Y.; Tweet, D. J.; Solanki, R.
January 2004
Applied Physics Letters;1/19/2004, Vol. 84 Issue 3, p398
Academic Journal
A technique for depositing high-dielectric-constant metal–oxide thin films is demonstrated that consists of alternating pulses of metal–chloride precursors and Hf(NO[sub 3])[sub 4] in which Hf(NO[sub 3])[sub 4] is used as an oxidizing agent as well as a metal source. The use of Hf(NO[sub 3])[sub 4], rather than a separate oxidizing agent such as H[sub 2]O, minimizes the potential for oxidation of the Si interface. Unlike HfCl[sub 4], a widely used precursor, the high reactivity of Hf(NO[sub 3])[sub 4] initiates uniform deposition on H-terminated Si beginning with the first pulse. Effective dielectric constants obtained for HfO[sub 2] films produced by this method were comparable to HfO[sub 2] films deposited using other methods and the leakage current densities were three orders of magnitude less than SiO[sub 2] of the same equivalent thickness. Deposition of HfAlO[sub x] and HfZrO[sub x] ternary oxide films was also examined. The deposition rate for films produced using this method is greater than one monolayer per cycle, indicating a mechanism that is different from standard atomic-layer deposition. © 2004 American Institute of Physics.


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