Circuit with small-capacitance high-quality Nb Josephson junctions

Watanabe, Michio; Nakamura, Yasunobu; Tsai, Jaw-Shen
January 2004
Applied Physics Letters;1/19/2004, Vol. 84 Issue 3, p410
Academic Journal
We have developed a fabrication process for nanoscale tunnel junctions which includes focused-ion-beam etching from different directions. By applying the process to a Nb/(Al–)Al[sub 2]O[sub 3]/Nb trilayer, we have fabricated a Nb single-electron transistor (SET), and characterized the SET at low temperatures, T=0.04–40 K. The superconducting gap energy and the transition temperature of the Nb SET agree with the bulk values, which suggests high quality Nb junctions. The single-electron charging energy of the SET is estimated to be larger than 1 K. © 2004 American Institute of Physics.


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