Low-noise photon counting with a radio-frequency quantum-dot field-effect transistor

Kardyna&lslash;, B. E.; Shields, A. J.; Beattie, N. S.; Farrer, I.; Cooper, K.; Ritchie, D. A.
January 2004
Applied Physics Letters;1/19/2004, Vol. 84 Issue 3, p419
Academic Journal
We present photon counting experiments with a single-photon detector based on a field-effect transistor gated by a layer of InAs quantum dots. A cryogenic radio-frequency amplifier is used to convert the photon-induced steps in the source-drain current of the transistor into voltage peaks. We measure a maximum photon detection efficiency of 0.14%, corresponding to internal quantum efficiency of 10%. The dark count rate is less than 10[sup -8] ns[sup -1] when the efficiency is 0.045%. © 2004 American Institute of Physics.


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