TITLE

Depletion-mode InGaAs metal-oxide-semiconductor field-effect transistor with oxide gate dielectric grown by atomic-layer deposition

AUTHOR(S)
Ye, P. D.; Wilk, G. D.; Yang, B.; Kwo, J.; Gossmann, H.-J. L.; Hong, M.; Ng, K. K.; Bude, J.
PUB. DATE
January 2004
SOURCE
Applied Physics Letters;1/19/2004, Vol. 84 Issue 3, p434
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Recently, significant progress has been made on GaAs metal-oxide-semiconductor field-effect transistors (MOSFETs) using atomic-layer deposition (ALD)-grown Al[sub 2]O[sub 3] as gate dielectric. We show here that further improvement can be achieved by inserting a thin In[sub 0.2]Ga[sub 0.8]As layer as part of the channel between Al[sub 2]O[sub 3] and GaAs channel. A 1-μm-gate-length, depletion-mode, n-channel In[sub 0.2]Ga[sub 0.8]As/GaAs MOSFET with an Al[sub 2]O[sub 3] gate oxide of 160 Å shows a gate leakage current density less than 10[sup -4] A/cm[sup 2], a maximum transconductance ∼105 mS/mm, and a strong accumulation current at V[sub gs]>0 in addition to buried-channel conduction. Together with longer gate-length devices, we deduce electron accumulation surface mobility for In[sub 0.2]Ga[sub 0.8]As as high as 660 cm2/V s at Al[sub 2]O[sub 3]/In[sub 0.2]Ga[sub 0.8]As interface. © 2004 American Institute of Physics.
ACCESSION #
11941923

 

Related Articles

  • Effects of varying interfacial oxide and high-k layer thicknesses for HfO2 metal–oxide–semiconductor field effect transistor. Se Jong Rhee; Chang Yong Kang; Chang Seok Kang; Rino Choi; Chang Hwan Choi; Akbar, Mohammad S.; Lee, Jack C. // Applied Physics Letters;8/16/2004, Vol. 85 Issue 7, p1286 

    A metal–oxide–semiconductor capacitor and field effect transistor with a hafnium oxide (HfO2) dielectric have been fabricated. Various thicknesses of interfacial oxide and HfO2 film have been used. The results show that the flatband voltage changed due to the change in the physical...

  • Characterization of fast charge trapping in bias temperature instability in metal-oxide-semiconductor field effect transistor with high dielectric constant. Minseok Jo; Seonghyun Kim; Joonmyoung Lee; Seungjae Jung; Ju-Bong Park; Hyung-Suk Jung; Rino Choi; Hyunsang Hwang // Applied Physics Letters;4/5/2010, Vol. 96 Issue 14, p142110 

    We used pulse bias temperature instability measurements to investigate the energy distributions of fast charge trapping sources to understand the origin of fast charge traps in an HfO2 device. The trap energy level was extracted using a trap-to-band tunneling model by changing the measurement...

  • Toward strain resistant flexible organic thin film transistors. Jedaa, Abdesselam; Halik, Marcus // Applied Physics Letters;9/7/2009, Vol. 95 Issue 10, p103309 

    We suggest a molecular design for small molecules as polycrystalline organic semiconductors in flexible organic thin film transistor applications, providing an improved stability during substrate bending. A stable operation of alkyl-substituted sexithiophens was obtained under strain up to...

  • Semiconductors: Spray-on silicon. Rosenberg, Lisa // Nature;4/6/2006, Vol. 440 Issue 7085, p749 

    The article reports on the use of a novel liquid precursor of solid silicon to allow the printing of semiconductor films via familiar inkjet technology for presenting a radical way of incorporating silicon into the transistor. The technique thus permit unprecedented control over the size and...

  • A sensor circuit using reference-based conductance switching in organic electrochemical transistors. Svensson, Per-Olof; Nilsson, David; Forchheimer, Robert; Berggren, Magnus // Applied Physics Letters;11/17/2008, Vol. 93 Issue 20, p203301 

    Using organic electrochemical transistors as sensors, the sample-receptor reaction often induces moderate changes only in the drain current dynamics as the gate voltage level is switched. Here, we report an electrochemical sensor circuit including electrochemical transistors based on...

  • Turn-on spread determines the size of the switching region in an avalanche transistor. Duan, Guoyong; Vainshtein, Sergey; Kostamovaara, Juha // Applied Physics Letters;5/7/2012, Vol. 100 Issue 19, p193505 

    It has been shown recently that only a small part of the emitter-base interface in a Si bipolar junction transistor participates in short-pulsing avalanche switching. This lateral current shrinkage attributed to the 'winner takes all' effect reduces the transistor switching size from 1600 to...

  • Noise-Parameter Measurements of SiGe HBTs under Nonlinear Conditions. Chambon, Cédric; Escotte, Laurent // AIP Conference Proceedings;2007, Vol. 922 Issue 1, p87 

    This paper deals with the measurements of “hot” noise-parameters applied to SiGe HBTs. Bias conditions and different sizes of transistors are taken into account. Afterwards, the main objective is to realize an amplifier with low-additive-noise in nonlinear regime, and then to design...

  • Plastic That Performs. Baker, Monya // Technology Review;Jul2005, Vol. 108 Issue 7, p86 

    This article focuses on a research which has shown that the transistors' inability to move electrons is due not to the plastic itself but to an interaction with other materials in the transistor. In a transistor, current passes through a semiconductor under the control of a gate electrode. The...

  • Fabrication and characterization of metal-ferroelectric (PbZr0.53Ti0.47O3)-Insulator (Y2O3)-semiconductor field effect transistors for nonvolatile memory applications. Shih, Wen-Chieh; Juan, Pi-Chun; Lee, Joseph Ya-min // Journal of Applied Physics;May2008, Vol. 103 Issue 9, p094110 

    Metal-ferroelectric-insulator-semiconductor (MFIS) field effect transistors with Pb(Zr0.53,Ti0.47)O3 (PZT) ferroelectric layer and yttrium oxide Y2O3 insulator layer were fabricated. The maximum C-V memory window of 1.5 V was obtained at a sweep voltage of 8 V. The dominating conduction...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics