Depletion-mode InGaAs metal-oxide-semiconductor field-effect transistor with oxide gate dielectric grown by atomic-layer deposition

Ye, P. D.; Wilk, G. D.; Yang, B.; Kwo, J.; Gossmann, H.-J. L.; Hong, M.; Ng, K. K.; Bude, J.
January 2004
Applied Physics Letters;1/19/2004, Vol. 84 Issue 3, p434
Academic Journal
Recently, significant progress has been made on GaAs metal-oxide-semiconductor field-effect transistors (MOSFETs) using atomic-layer deposition (ALD)-grown Al[sub 2]O[sub 3] as gate dielectric. We show here that further improvement can be achieved by inserting a thin In[sub 0.2]Ga[sub 0.8]As layer as part of the channel between Al[sub 2]O[sub 3] and GaAs channel. A 1-μm-gate-length, depletion-mode, n-channel In[sub 0.2]Ga[sub 0.8]As/GaAs MOSFET with an Al[sub 2]O[sub 3] gate oxide of 160 Å shows a gate leakage current density less than 10[sup -4] A/cm[sup 2], a maximum transconductance ∼105 mS/mm, and a strong accumulation current at V[sub gs]>0 in addition to buried-channel conduction. Together with longer gate-length devices, we deduce electron accumulation surface mobility for In[sub 0.2]Ga[sub 0.8]As as high as 660 cm2/V s at Al[sub 2]O[sub 3]/In[sub 0.2]Ga[sub 0.8]As interface. © 2004 American Institute of Physics.


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