InAs/InAsP composite channels for antimonide-based field-effect transistors

Lin, H.-K.; Kadow, C.; Dahlström, M.; Bae, J.-U.; Rodwell, M. J. W.; Gossard, A. C.; Brar, B.; Sullivan, G.; Nagy, G.; Bergman, J.
January 2004
Applied Physics Letters;1/19/2004, Vol. 84 Issue 3, p437
Academic Journal
We report the growth and transport characteristics of stepped InAs/InAs[sub 1-x]P[sub x] quantum wells with AlSb barriers. Electron mobilities and carrier concentrations in these composite stepped quantum wells were studied as a function of growth temperature and phosphorus content. For InAs[sub 1-x]P[sub x] grown at 430 °C substrate temperature (nominal x=0.2), a high 22 500 cm[sup 2]/V s electron mobility was observed, while 7100 cm[sup 2]/V s mobility was observed in a single strained InAs[sub 1-x]P[sub x] quantum well layer. Heterostructure field-effect transistors fabricated using the composite quantum wells exhibited increased breakdown voltage and a 14:1 reduction in source-drain dc conduction when compared to a similar InAs-channel device. © 2004 American Institute of Physics.


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