TITLE

High thermal stability of magnetic tunnel junctions with oxide diffusion barrier layers

AUTHOR(S)
Fukumoto, Yoshiyuki; Shimura, Ken-ichi; Kamijo, Atsushi; Tahara, Shuichi; Yoda, Hiroaki
PUB. DATE
January 2004
SOURCE
Applied Physics Letters;1/12/2004, Vol. 84 Issue 2, p233
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We developed two types of magnetic tunnel junctions (MTJs) that showed high thermal stability. One is a PtMn exchange-biased spin-valve MTJ with a CoFe/Al-oxide (AlOx)/NiFe free layer and a CoFeTaOx/CoFe pinned layer, and the other is a pseudo-spin-valve (PSV) MTJ with a CoFe/AlOx/NiFe soft layer, where AlOx and CoFeTaOx act as barriers for Ni and Mn diffusion toward the tunnel barrier, respectively. After 390 °C-1H annealing, the PSV MTJs maintained 28% and the SV MTJs 39% of tunnel magnetoresistance. Transmission electron microscopy observation of the SV MTJs after 380 °C-1H annealing revealed that the migrated Mn atoms were trapped at the CoFeTaOx layer. © 2004 American Institute of Physics.
ACCESSION #
11861873

 

Related Articles

  • Effect of electrode composition on the tunnel magnetoresistance of pseudo-spin-valve magnetic tunnel junction with a MgO tunnel barrier. Lee, Y. M.; Hayakawa, J.; Ikeda, S.; Matsukura, F.; Ohno, H. // Applied Physics Letters;5/21/2007, Vol. 90 Issue 21, p212507 

    The authors investigate the effect of electrode composition on the tunnel magnetoresistance (TMR) ratio of (CoxFe100-x)80B20/MgO/(CoxFe100-x)80B20 pseudo-spin-valve magnetic tunnel junctions (MTJs). TMR ratio is found to strongly depend on the composition and thicknesses of CoFeB. High...

  • Current-perpendicular-to-plane spin valves with a Co2Mn(Ga0.5Sn0.5) Heusler alloy. Hase, N.; Varaprasad, B. S. D. Ch. S.; Nakatani, T. M.; Sukegawa, H.; Kasai, S.; Takahashi, Y. K.; Furubayashi, T.; Hono, K. // Journal of Applied Physics;Nov2010, Vol. 108 Issue 9, p093916 

    Current-perpendicular-to-plane spin valves (SVs) with a new Heusler alloy of Co2Mn(Ga0.5Sn0.5) (CMGS) as magnetic layers and an Ag spacer have been investigated. Magnetoresistance (MR) values of 8.8% and 17.2% and resistance change-area product (ΔRA) of 4.0 mΩ μm2 and 6.5 mΩ μm2...

  • Enhancement of magnetoresistance by inserting thin NiAl layers at the interfaces in Co2FeGa0.5Ge0.5/Ag/Co2FeGa0.5Ge0.5 current-perpendicular-to-plane pseudo spin valves. Jung, J. W.; Sakuraba, Y.; Sasaki, T. T.; Miura, Y.; Hono, K. // Applied Physics Letters;3/7/2016, Vol. 108 Issue 10, p102408-1 

    We have investigated the effects of insertion of a thin NiAl layer (≤0.63?nm) into a Co2FeGa0.5Ge0.5 (CFGG)/Ag interface on the magnetoresistive properties in CFGG/Ag/CFGG current-perpendicular-to-plane giant magnetoresistance(CPP-GMR) pseudo spin valves (PSVs). First-principles...

  • Large inverse magnetoresistance in fully epitaxial Fe/Fe3O4/MgO/Co magnetic tunnel junctions. Greullet, F.; Snoeck, E.; Tiusan, C.; Hehn, M.; Lacour, D.; Lenoble, O.; Magen, C.; Calmels, L. // Applied Physics Letters;2/4/2008, Vol. 92 Issue 5, p053508 

    Fully epitaxial Fe(001)/Fe3O4(001)/MgO(001)/Co micron-sized magnetic tunnel junctions have been elaborated on MgO(001) substrates. X-ray reflectivity and high-resolution transmission electron microscopy revealed a good quality and epitaxial growth of the stack with abrupt interfaces. The...

  • Origin of dual epitaxy in the growth of CdTe on (211) GaAs. Nakamura, Y.; Otsuka, N. // Applied Physics Letters;3/16/1992, Vol. 60 Issue 11, p1372 

    Analyzes the atomic structure of the (133)cadmium telluride/(211)gallium arsenide interface. Use of high resolution transmission electron microscopy; Origin of the dual epitaxy; Presence of a mechanism accommodating the lattice mismatch at the interface.

  • Magnetotransport in manganite trilayer junctions grown by 90° off-axis sputtering. Noh, J. S.; Nath, T. K.; Eom, C. B.; Sun, J. Z.; Tian, W.; Pan, X. Q. // Applied Physics Letters;7/9/2001, Vol. 79 Issue 2 

    We report magnetotransport studies on La[sub 0.67]Sr[sub 0.33]MnO[sub 3]/SrTiO[sub 3]/La[sub 0.67]Sr[sub 0.33]MnO[sub 3] trilayer junctions, fabricated using 90° off-axis sputtering. Films were grown on both (001) (LaAlO[sub 3])[sub 0.3]–(Sr[sub 2]AlTaO[sub 6])[sub 0.7] and (110)...

  • Hysteresis-free spin valves with a noncollinear configuration of magnetic anisotropy. Naumova, L.; Milyaev, M.; Chernyshova, T.; Proglyado, V.; Kamenskii, I.; Ustinov, V. // Physics of the Solid State;Jun2014, Vol. 56 Issue 6, p1125 

    A noncollinear configuration of magnetic anisotropy in spin valves with strong and weak interlayer couplings has been formed by annealing and cooling in a magnetic field. The dependence of the low-field magnetoresistance hysteresis loop width on the angle between the applied magnetic field and...

  • Large magnetoresistance in current-perpendicular-to-plane pseudo spin-valves using Co2Fe(Ga0.5Ge0.5) Heusler alloy and AgZn spacer. Ye Du; Furubayashi, T.; Sasaki, T. T.; Sakuraba, Y.; Takahashi, Y. K.; Hono, K. // Applied Physics Letters;2015, Vol. 107 Issue 11, p1 

    Fully epitaxial pseudo spin-valves (PSVs) using 10-nm-thick Co2Fe(Ga0.5Ge0.5) (CFGG) ferromagnetic layers and a 5-nm-thick AgZn space layer annealed at 630°C show a large current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) output with resistance-change area product, ΔRA, of...

  • Nanoconstricted structure for current-confined path in current-perpendicular-to-plane spin valves with high magnetoresistance. Fukuzawa, H.; Yuasa, H.; Koi, K.; Iwasaki, H.; Tanaka, Y.; Takahashi, Y. K.; Hono, K. // Journal of Applied Physics;5/15/2005, Vol. 97 Issue 10, p10Q917 

    We have successfully observed a nanoconstricted structure for current-confined-path (CCP) effect in current-perpendicular-to-plane-giant-magnetoresistance (CPP-GMR) spin valves. By inserting an AlCu nano-oxide layer (NOL) formed by ion-assisted oxidation (IAO) between a pinned layer and a free...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics