High thermal stability of magnetic tunnel junctions with oxide diffusion barrier layers

Fukumoto, Yoshiyuki; Shimura, Ken-ichi; Kamijo, Atsushi; Tahara, Shuichi; Yoda, Hiroaki
January 2004
Applied Physics Letters;1/12/2004, Vol. 84 Issue 2, p233
Academic Journal
We developed two types of magnetic tunnel junctions (MTJs) that showed high thermal stability. One is a PtMn exchange-biased spin-valve MTJ with a CoFe/Al-oxide (AlOx)/NiFe free layer and a CoFeTaOx/CoFe pinned layer, and the other is a pseudo-spin-valve (PSV) MTJ with a CoFe/AlOx/NiFe soft layer, where AlOx and CoFeTaOx act as barriers for Ni and Mn diffusion toward the tunnel barrier, respectively. After 390 °C-1H annealing, the PSV MTJs maintained 28% and the SV MTJs 39% of tunnel magnetoresistance. Transmission electron microscopy observation of the SV MTJs after 380 °C-1H annealing revealed that the migrated Mn atoms were trapped at the CoFeTaOx layer. © 2004 American Institute of Physics.


Related Articles

  • Effect of electrode composition on the tunnel magnetoresistance of pseudo-spin-valve magnetic tunnel junction with a MgO tunnel barrier. Lee, Y. M.; Hayakawa, J.; Ikeda, S.; Matsukura, F.; Ohno, H. // Applied Physics Letters;5/21/2007, Vol. 90 Issue 21, p212507 

    The authors investigate the effect of electrode composition on the tunnel magnetoresistance (TMR) ratio of (CoxFe100-x)80B20/MgO/(CoxFe100-x)80B20 pseudo-spin-valve magnetic tunnel junctions (MTJs). TMR ratio is found to strongly depend on the composition and thicknesses of CoFeB. High...

  • Current-perpendicular-to-plane spin valves with a Co2Mn(Ga0.5Sn0.5) Heusler alloy. Hase, N.; Varaprasad, B. S. D. Ch. S.; Nakatani, T. M.; Sukegawa, H.; Kasai, S.; Takahashi, Y. K.; Furubayashi, T.; Hono, K. // Journal of Applied Physics;Nov2010, Vol. 108 Issue 9, p093916 

    Current-perpendicular-to-plane spin valves (SVs) with a new Heusler alloy of Co2Mn(Ga0.5Sn0.5) (CMGS) as magnetic layers and an Ag spacer have been investigated. Magnetoresistance (MR) values of 8.8% and 17.2% and resistance change-area product (ΔRA) of 4.0 mΩ μm2 and 6.5 mΩ μm2...

  • Enhancement of magnetoresistance by inserting thin NiAl layers at the interfaces in Co2FeGa0.5Ge0.5/Ag/Co2FeGa0.5Ge0.5 current-perpendicular-to-plane pseudo spin valves. Jung, J. W.; Sakuraba, Y.; Sasaki, T. T.; Miura, Y.; Hono, K. // Applied Physics Letters;3/7/2016, Vol. 108 Issue 10, p102408-1 

    We have investigated the effects of insertion of a thin NiAl layer (≤0.63?nm) into a Co2FeGa0.5Ge0.5 (CFGG)/Ag interface on the magnetoresistive properties in CFGG/Ag/CFGG current-perpendicular-to-plane giant magnetoresistance(CPP-GMR) pseudo spin valves (PSVs). First-principles...

  • Large inverse magnetoresistance in fully epitaxial Fe/Fe3O4/MgO/Co magnetic tunnel junctions. Greullet, F.; Snoeck, E.; Tiusan, C.; Hehn, M.; Lacour, D.; Lenoble, O.; Magen, C.; Calmels, L. // Applied Physics Letters;2/4/2008, Vol. 92 Issue 5, p053508 

    Fully epitaxial Fe(001)/Fe3O4(001)/MgO(001)/Co micron-sized magnetic tunnel junctions have been elaborated on MgO(001) substrates. X-ray reflectivity and high-resolution transmission electron microscopy revealed a good quality and epitaxial growth of the stack with abrupt interfaces. The...

  • Origin of dual epitaxy in the growth of CdTe on (211) GaAs. Nakamura, Y.; Otsuka, N. // Applied Physics Letters;3/16/1992, Vol. 60 Issue 11, p1372 

    Analyzes the atomic structure of the (133)cadmium telluride/(211)gallium arsenide interface. Use of high resolution transmission electron microscopy; Origin of the dual epitaxy; Presence of a mechanism accommodating the lattice mismatch at the interface.

  • Magnetotransport in manganite trilayer junctions grown by 90° off-axis sputtering. Noh, J. S.; Nath, T. K.; Eom, C. B.; Sun, J. Z.; Tian, W.; Pan, X. Q. // Applied Physics Letters;7/9/2001, Vol. 79 Issue 2 

    We report magnetotransport studies on La[sub 0.67]Sr[sub 0.33]MnO[sub 3]/SrTiO[sub 3]/La[sub 0.67]Sr[sub 0.33]MnO[sub 3] trilayer junctions, fabricated using 90° off-axis sputtering. Films were grown on both (001) (LaAlO[sub 3])[sub 0.3]–(Sr[sub 2]AlTaO[sub 6])[sub 0.7] and (110)...

  • Hysteresis-free spin valves with a noncollinear configuration of magnetic anisotropy. Naumova, L.; Milyaev, M.; Chernyshova, T.; Proglyado, V.; Kamenskii, I.; Ustinov, V. // Physics of the Solid State;Jun2014, Vol. 56 Issue 6, p1125 

    A noncollinear configuration of magnetic anisotropy in spin valves with strong and weak interlayer couplings has been formed by annealing and cooling in a magnetic field. The dependence of the low-field magnetoresistance hysteresis loop width on the angle between the applied magnetic field and...

  • Large magnetoresistance in current-perpendicular-to-plane pseudo spin-valves using Co2Fe(Ga0.5Ge0.5) Heusler alloy and AgZn spacer. Ye Du; Furubayashi, T.; Sasaki, T. T.; Sakuraba, Y.; Takahashi, Y. K.; Hono, K. // Applied Physics Letters;9/14/2015, Vol. 107 Issue 11, p1 

    Fully epitaxial pseudo spin-valves (PSVs) using 10-nm-thick Co2Fe(Ga0.5Ge0.5) (CFGG) ferromagnetic layers and a 5-nm-thick AgZn space layer annealed at 630°C show a large current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) output with resistance-change area product, ΔRA, of...

  • Nanoconstricted structure for current-confined path in current-perpendicular-to-plane spin valves with high magnetoresistance. Fukuzawa, H.; Yuasa, H.; Koi, K.; Iwasaki, H.; Tanaka, Y.; Takahashi, Y. K.; Hono, K. // Journal of Applied Physics;5/15/2005, Vol. 97 Issue 10, p10Q917 

    We have successfully observed a nanoconstricted structure for current-confined-path (CCP) effect in current-perpendicular-to-plane-giant-magnetoresistance (CPP-GMR) spin valves. By inserting an AlCu nano-oxide layer (NOL) formed by ion-assisted oxidation (IAO) between a pinned layer and a free...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics