Very large dielectric constant of highly oriented Pb[sub 1-x]Ba[sub x]TiO[sub 3] thin films prepared by chemical deposition

Pontes, F.M.; Leite, E.R.; Mambrini, G.P.; Escote, M.T.; Longo, E.; Varela, J.A.
January 2004
Applied Physics Letters;1/12/2004, Vol. 84 Issue 2, p248
Academic Journal
Highly (100) oriented Pb[sub 0.8]Ba[sub 0.2]TiO[sub 3]/LaNiO[sub 3] structures were grown on LaAlO[sub 3](100) substrates by using a wet, soft chemical method and crystallized by the microwave oven technique. The Au/PBT/LaNiO[sub 3]/LaAlO[sub 3] capacitor shows a hysteresis loop with remnant polarization, P[sub r], of 15 μC/cm[sup 2], and coercive field, E[sub c], of 47 kV/cm at an applied voltage of 3 V, along with a dielectric constant over 1800. Atomic force microscopy showed that Pb[sub 0.8]Ba[sub 0.2]TiO[sub 3] is composed of large grains about 300 nm. The experimental results demonstrated that the microwave preparation is rapid, clean, and energy efficient. Therefore, we demonstrated that the combination of the soft chemical method with the microwave process is a promising technique to grow highly oriented thin films with excellent dielectric and ferroelectric properties, which can be used in various integrated device applications. © 2004 American Institute of Physics.


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