Complex admittance analysis for La[sub 2]Hf[sub 2]O[sub 7]/SiO[sub 2] high-κ dielectric stacks

Apostolopoulos, G.; Vellianitis, G.; Dimoulas, A.; Hooker, J.C.; Conard, T.
January 2004
Applied Physics Letters;1/12/2004, Vol. 84 Issue 2, p260
Academic Journal
A method of analyzing the complex admittance of metal-insulator-semiconductor (MIS) structures has been developed with the aim to extract the density and capture cross section of interface traps from combined ac capacitance–voltage and conductance–voltage measurements at different frequencies. The procedure is applied to study dielectric stacks based on La[sub 2]Hf[sub 2]O[sub 7] high-κ dielectric, which could be considered as a SiO[sub 2] replacement for future transistors. © 2004 American Institute of Physics.


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