TITLE

Room-temperature continuous-wave operation of InAsSb quantum-dot lasers near 2 μm based on (001) InP substrate

AUTHOR(S)
Yueming Qiu; Uhl, David; Keo, Sam
PUB. DATE
January 2004
SOURCE
Applied Physics Letters;1/12/2004, Vol. 84 Issue 2, p263
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Single-stack InAsSb self-assembled quantum-dot lasers based on (001) InP substrate have been grown by metalorganic vapor-phase epitaxy. The narrow ridge waveguide lasers lased at wavelengths near 2 μm up to 25 °C in continuous-wave operation. At room temperature, a differential quantum efficiency of 13% is obtained and the maximum output optical power reaches 3 mW per facet with a threshold current density of 730 A/cm[sup 2]. With increasing temperature the emission wavelength is extremely temperature stable, and a very low wavelength temperature sensitivity of 0.05 nm/°C is measured, which is even lower than that caused by the refractive index change. © 2004 American Institute of Physics.
ACCESSION #
11861863

 

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