Room-temperature continuous-wave operation of InAsSb quantum-dot lasers near 2 μm based on (001) InP substrate

Yueming Qiu; Uhl, David; Keo, Sam
January 2004
Applied Physics Letters;1/12/2004, Vol. 84 Issue 2, p263
Academic Journal
Single-stack InAsSb self-assembled quantum-dot lasers based on (001) InP substrate have been grown by metalorganic vapor-phase epitaxy. The narrow ridge waveguide lasers lased at wavelengths near 2 μm up to 25 °C in continuous-wave operation. At room temperature, a differential quantum efficiency of 13% is obtained and the maximum output optical power reaches 3 mW per facet with a threshold current density of 730 A/cm[sup 2]. With increasing temperature the emission wavelength is extremely temperature stable, and a very low wavelength temperature sensitivity of 0.05 nm/°C is measured, which is even lower than that caused by the refractive index change. © 2004 American Institute of Physics.


Related Articles

  • Ultrafast gain dynamics in InP quantum-dot optical amplifiers. Langbein, Wolfgang; Cesari, Valentina; Masia, Francesco; Krysa, Andrey B.; Borri, Paola; Smowton, Peter M. // Applied Physics Letters;11/22/2010, Vol. 97 Issue 21, p211103 

    We measured the gain dynamics at the ground-state transition in an electrically pumped InP/AlGaInP quantum-dot optical amplifier at room temperature by femtosecond differential transmission. The gain shows an ultrafast recovery within 200 fs, even faster than in state-of-the-art InAs/GaAs...

  • Optical Properties of InAs Quantum Dots Grown on Variable Stoichiometry InxGa1-xAs and In0.53AlyGa0.43-yAs Layers. Mendoza-Alvarez, Julio G.; Pires, Mauricio P.; Landi, Sandra M.; Souza, Patricia L.; Villas-Boas, Jose M.; Studart, Nelson // AIP Conference Proceedings;2007, Vol. 885 Issue 1, p240 

    The use of InP substrates has made possible to obtain InAs QD layers with room temperature photoluminescence (PL) in the range 2.0–2.2 μm. This last result was possible because of the shift to lower energies of the InAs QD energy bandgap due to the reduction in the strain field between...

  • Unusual nanostructures of "lattice matched" InP on AlInAs. Gocalinska, A.; Manganaro, M.; Juska, G.; Dimastrodonato, V.; Thomas, K.; Joyce, B. A.; Zhang, J.; Vvedensky, D. D.; Pelucchi, E. // Applied Physics Letters;4/7/2014, Vol. 104 Issue 14, p1 

    We show that the morphology of the initial monolayers of InP on Al0.48In0.52As grown by metalorganic vapor-phase epitaxy does not follow the expected layer-by-layer growth mode of lattice-matched systems, but instead develops a number of low-dimensional structures, e.g., quantum dots and wires....

  • InAs self-assembled quantum dots on InP by molecular beam epitaxy. Fafard, S.; Wasilewski, Z. // Applied Physics Letters;2/12/1996, Vol. 68 Issue 7, p991 

    Examines the indium arsenide self-assembled quantum dots (QD) on indium phosphide substrate by molecular beam epitaxy. Range of the spectral region; Characterization of QD using photoluminescence and transmission electron microscopy; Influence of buffer layer on the island formation of residual...

  • Porous InP array-directed assembly of InAs nanostructure. Xiao-Ling Che; Lu Li; Feng-Qi Liu; Xiu-Qi Huang; Zhan-Guo Wang // Applied Physics Letters;6/26/2006, Vol. 88 Issue 26, p263107 

    Fascinating features of porous InP array-directed assembly of InAs nanostructures are presented. Strained InAs nanostructures are grown by molecular-beam epitaxy on electrochemical etched porous InP substrate. Identical porous substrate with different pore depths defines different growth modes....

  • Direct formation of InAs quantum dots grown on InP (001) by solid-source molecular beam epitaxy. Fuster, David; Rivera, Antonio; Alén, Benito; Alonso-Gonz&x00E1;lez, Pablo; González, Yolanda; González, Luisa // Applied Physics Letters;3/30/2009, Vol. 94 Issue 13, p133106 

    We have developed a growth process that leads to the direct formation of self-assembled InAs quantum dots on InP(001) by solid-source molecular beam epitaxy avoiding the previous formation of quantum wires usually obtained by this technique. The process consists of a periodically alternated...

  • Wavelength tuning of InAs quantum dots grown on InP (100) by chemical-beam epitaxy. Gong, Q.; Nötzel, R.; van Veldhoven, P.J.; Eijkemans, T.J.; Wolter, J.H. // Applied Physics Letters;1/12/2004, Vol. 84 Issue 2, p275 

    We report on an effective way to continuously tune the emission wavelength of InAs quantum dots (QDs) grown on InP (100) by chemical-beam epitaxy. The InAs QD layer is embedded in a GaInAsP layer lattice matched to InP. With an ultrathin GaAs layer inserted between the InAs QD layer and the...

  • InP on Si substrates characterized by spectroscopic ellipsometry. Zwinge, G.; Ziegenmeyer, I.; Wehmann, H.-H.; Tang, G.-P.; Schlachetzki, A. // Journal of Applied Physics;11/1/1993, Vol. 74 Issue 9, p5889 

    Presents a study in which a spectroscopic ellipsometry was used to analyze the refractive index and the absorption coefficient of thin buffer layers of indium phosphide grown by metalorganic vapor phase epitaxy on silicon substrates. Influence on the crystallographic properties of the...

  • Injection lasers with vertically aligned InP/GaInP quantum dots: Dependence of the threshold current on temperature and dot size. Riedl, T.; Fehrenbacher, E.; Hangleiter, A.; Zundel, M. K.; Eberl, K. // Applied Physics Letters;12/21/1998, Vol. 73 Issue 25 

    We report on threefold-stacked vertically aligned InP/GaInP quantum dot injection lasers emitting in the visible part of the spectrum (690–705 nm) with a low threshold current density of j[sub th]=172 A/cm[sup 2] at 90 K showing a thermally activated increase towards higher temperatures....


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics