Growth of high-quality single-wall carbon nanotubes without amorphous carbon formation

Lacerda, R.G.; Teh, A.S.; Yang, M.H.; Teo, K.B.K.; Rupesinghe, N.L.; Dalal, S.H.; Kozoil, K.K.K.; Roy, D.; Amaratunga, G.A.J.; Milne, W.I.; Chhowalla, M.; Hasko, D.G.; Wyczisk, F.; Legagneux, P.
January 2004
Applied Physics Letters;1/12/2004, Vol. 84 Issue 2, p269
Academic Journal
We report an alternative way of preparing high-quality single-wall carbon nanotubes (SWCNTs). Using a triple-layer thin film of Al/Fe/Mo (with Fe as a catalyst) on an oxidized Si substrate, the sample is exposed to a single short burst (5 s) of acetylene at 1000 °C. This produced a high yield of very well graphitized SWCNTs, as confirmed by transmission electron microscopy and Raman spectroscopy. We believe that the high temperature is responsible for the high crystallinity/straightness of the nanotubes, and the rapid growth process allows us to achieve a clean amorphous carbon (a-C) free deposition which is important for SWCNT device fabrication. The absence of a-C is confirmed by Auger electron spectroscopy, Raman spectroscopy, and electrical measurements. © 2004 American Institute of Physics.


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