Structural perturbations within Ge nanocrystals in silica

Cheung, A.; de M. Azevedo, G.; Glover, C.J.; Llewelyn, D.J.; Elliman, R.G.; Foran, G.J.; Ridgway, M.C.
January 2004
Applied Physics Letters;1/12/2004, Vol. 84 Issue 2, p278
Academic Journal
Extended x-ray absorption fine structure (EXAFS) spectroscopy was used to identify structural perturbations in Ge nanocrystals produced in silica by ion implantation and annealing. Although the nanocrystals retained tetrahedral coordination, both the short- and medium-range orders were perturbed relative to bulk crystalline material. Equivalently, the nanocrystal interatomic distance distribution deviated from that of bulk crystalline Ge, exhibiting enhanced structural disorder of both Gaussian and non-Gaussian forms in the first, second, and third nearest-neighbor shells. The relative influences of nanocrystal size, bonding distortions, multiple phases, and a matrix-induced compression were considered. © 2004 American Institute of Physics.


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