TITLE

Structural perturbations within Ge nanocrystals in silica

AUTHOR(S)
Cheung, A.; de M. Azevedo, G.; Glover, C.J.; Llewelyn, D.J.; Elliman, R.G.; Foran, G.J.; Ridgway, M.C.
PUB. DATE
January 2004
SOURCE
Applied Physics Letters;1/12/2004, Vol. 84 Issue 2, p278
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Extended x-ray absorption fine structure (EXAFS) spectroscopy was used to identify structural perturbations in Ge nanocrystals produced in silica by ion implantation and annealing. Although the nanocrystals retained tetrahedral coordination, both the short- and medium-range orders were perturbed relative to bulk crystalline material. Equivalently, the nanocrystal interatomic distance distribution deviated from that of bulk crystalline Ge, exhibiting enhanced structural disorder of both Gaussian and non-Gaussian forms in the first, second, and third nearest-neighbor shells. The relative influences of nanocrystal size, bonding distortions, multiple phases, and a matrix-induced compression were considered. © 2004 American Institute of Physics.
ACCESSION #
11861858

 

Related Articles

  • Multimodal impurity redistribution and nanocluster formation in Ge implanted silicon dioxide films. von Borany, J.; Grotzschel, R. // Applied Physics Letters;12/1/1997, Vol. 71 Issue 22, p3215 

    Examines the depth distribution of germanium (Ge) implanted into thermally grown SiO[sub 2] films. Discovery of the redistribution of the as-implanted Ge profile; Formation of the crystalline Ge nanoclusters; Discussion of the evolution of nanoclusters.

  • Surface, stress, and impurity effects on room-temperature migration of ion-beam-generated point defects. Coffa, S.; La Magna, A.; Privitera, V.; Mannino, G. // Applied Physics Letters;9/14/1998, Vol. 73 Issue 11 

    We have analyzed the perturbations produced by recombination at surface, trapping at impurities, and stress fields on the room-temperature migration properties of point defects in Si. A stack consisting of a Si oxide (or a Si nitride) and a polycrystalline Si layer, deposited on Si samples, was...

  • Multivalley Splitting of the Shallow Donor Energy Spectrum in Semiconductors with Diamond and Sphalerite Structures. Zubkova, S. M.; Izyumov, V. A.; Rusina, L. N.; Smelyanskaya, E. V. // Semiconductors;Mar2000, Vol. 34 Issue 3, p272 

    The consistent application of the perturbation theory to the solution of the Schrödinger equation describing the shallow-donor state in multivalley semiconductors has allowed us to obtain a secular equation of an order equal to the number of valleys. The solution of this equation yields both...

  • Formation of Photoluminescence Centers During Annealing of SiO[sub 2] Layers Implanted with Ge Ions. Kachurin, G. A.; Rebohle, L.; Tyschenko, I. E.; Volodin, V. A.; Voelskow, M.; Skorupa, W.; Froeb, H. // Semiconductors;Jan2000, Vol. 34 Issue 1, p21 

    Photoluminescence (PL), Raman scattering, and the Rutherford backscattering of α-particles were used to study the formation of the centers of radiative-recombination emission in the visible region of the spectrum on annealing of the SiO[sub 2] layers implanted with Ge ions. It was found that...

  • Vibrational dynamics and band structure of methyl-terminated Ge(111). Hund, Zachary M.; Nihill, Kevin J.; Campi, Davide; Wong, Keith T.; Lewis, Nathan S.; Bernasconi, M.; Benedek, G.; Sibener, S. J. // Journal of Chemical Physics;2015, Vol. 143 Issue 12, p1 

    A combined synthesis, experiment, and theory approach, using elastic and inelastic helium atom scattering along with ab initio density functional perturbation theory, has been used to investigate the vibrational dynamics and band structure of a recently synthesized organic-functionalized...

  • Statistical analysis of semiconductor devices. Mayergoyz, I. D.; Andrei, P. // Journal of Applied Physics;9/15/2001, Vol. 90 Issue 6 

    A technique for the analysis of random dopant-induced effects in semiconductor devices is presented. It is based on the “small signal analysis” (perturbation) technique. It is computationally much more efficient than the existing purely “statistical” techniques, and it...

  • The distribution of the modes of coupled quartic oscillators. Tomiya, Mitsuyoshi; Yoshinaga, Naotaka // AIP Conference Proceedings;2001, Vol. 553 Issue 1, p223 

    The mode fluctuation distribution (MFD) of quartic oscillators coupled by quartic perturbations is studied numerically. Changing a single coupling strength, the system can be continuously transferred from the integrable to the chaotic regime. It is demonstrated that the MFDs in two- and...

  • Learning Gene Networks under SNP Perturbations Using eQTL Datasets. Zhang, Lingxue; Kim, Seyoung // PLoS Computational Biology;Feb2014, Vol. 10 Issue 2, p1 

    The standard approach for identifying gene networks is based on experimental perturbations of gene regulatory systems such as gene knock-out experiments, followed by a genome-wide profiling of differential gene expressions. However, this approach is significantly limited in that it is not...

  • Photodecay of a Negative Ion Exposed to Ultrashort Electromagnetic Pulses of Different Shapes. Astapenko, V.; Bagan, V. // Russian Physics Journal;Apr2014, Vol. 56 Issue 12, p1344 

    Dependences of photodecay of a negative ion exposed to ultrashort electromagnetic pulses on pulse duration and its carrier frequency (for a Gaussian envelope) are theoretically investigated, and the energy spectrum of emitted photoelectrons is analyzed. Calculation is performed within the...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics