TITLE

Highly efficient red phosphorescent light-emitting diodes based on ruthenium(II)-complex-doped semiconductive polymers

AUTHOR(S)
Hong Xia; Chengbo Zhang, J.R.; Song Qiu, J.R.; Ping Lu; Jingying Zhang, J.R.; Yuguang Ma
PUB. DATE
January 2004
SOURCE
Applied Physics Letters;1/12/2004, Vol. 84 Issue 2, p290
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Red electrophosphorescence from light-emitting devices based on ruthenium(II)-complex [Ru(4,7-Ph[sub 2]-phen)[sub 3]][sup 2+]-doped wide-band-gap semiconductive polymers, i.e., poly(vinylcarbazole) (PVK), polydihexylfluorene (PDHF), and ladderlike polyphenylene (LPPP), as the emitting layers are reported. However, only highly efficient energy transfer was investigated in a PVK system, not only because of the relatively longer lifetime of its excited state compared with PDHF and LPPP, but also because of the good chemical compatibility of [Ru(4,7-Ph[sub 2]-phen)[sub 3]][sup 2+] with PVK. The EL spectra show the characteristic spectrum of [Ru(4,7-Ph[sub 2]-phen)[sub 3]][sup 2+], at a peak of 612 nm and Commission Internationale del’Eclairage of (0.62, 0.37). The optimized device indium tin oxide/PVK: 5 wt % [Ru(4,7-Ph[sub 2]-phen)[sub 3]][sup 2+]/PBD/Alq[sub 3]/LiF/Al shows the maximum luminance efficiency and power efficiency as 8.6 cd/A and 2.1 lm/W, respectively. © 2004 American Institute of Physics.
ACCESSION #
11861854

 

Related Articles

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics