High-speed, short-channel polycrystalline silicon thin-film transistors

Brotherton, S.D.; Glasse, C.; Glaister, C.; Green, P.; Rohlfing, F.; Ayres, J.R.
January 2004
Applied Physics Letters;1/12/2004, Vol. 84 Issue 2, p293
Academic Journal
Results are presented on the performance of low-temperature, short-channel polycrystalline silicon (poly-Si) thin-film transistors (TFTs), with channel length down to 0.5 μm, and scaled gate oxide thickness down to 20 nm. Good TFT switching characteristics were obtained, and the uniformity of short-channel TFTs was shown to have a standard deviation of better then 10%, even for channel widths as small as 4 μm. The 0.5 μm TFTs have been incorporated into a 15-stage complementary pair metal-oxide-Si transistor ring oscillator, which, at a supply voltage of 3 V, operated with a delay/stage of ∼0.1 ns. © 2004 American Institute of Physics.


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