Observation of the apparent metal–insulator transition of high-mobility two-dimensional electron system in a Si/Si[sub 1-x]Ge[sub x] heterostructure

Lai, K.; Pan, W.; Tsui, D.C.; Ya-Hong Xie
January 2004
Applied Physics Letters;1/12/2004, Vol. 84 Issue 2, p302
Academic Journal
Field-effect transistors are fabricated from the Si/Si[sub 1-x]Ge[sub x] heterostructures. The density of the two-dimensional electron system (2DES) in the strained Si quantum well can be controllably tuned from 2.13×10[sup 11] to 4.24×10[sup 11] cm[sup -2]. The temperature dependence of the resistivity of the 2DES was measured and the apparent metal–insulator transition was observed. Its main features are similar to those reported in other semiconductor-based two-dimensional systems. © 2004 American Institute of Physics.


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