Back-gated MOSFETs with controlled silicon thickness for adaptive threshold-voltage control

Avci, U.; Tiwari, S.
January 2004
Electronics Letters;1/8/2004, Vol. 40 Issue 1, p74
Academic Journal
Experimental results for back-gated thin silicon transistors that allow adaptive threshold-voltage control and exhibit low drain-induced barrier-lowering due to improved electrostatics of the geometry are reported. The implementation of the back-gate is achieved by a low-temperature bonding process capable of tens of nanometre silicon channel thickness, good surface and bulk quality. The technology is compatible with mainstream silicon CMOS processing technology.


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