Time-resolved photoluminescence measurements of InAs self-assembled quantum dots grown on misorientated substrates

Karachinsky, L. Ya.; Pellegrini, S.; Buller, G. S.; Shkolnik, A. S.; Gordeev, N. Yu.; Evtikhiev, V. P.; Novikov, V. B.
January 2004
Applied Physics Letters;1/5/2004, Vol. 84 Issue 1, p7
Academic Journal
Time-resolved photoluminescence decay measurements have been performed on samples with varying-sized self-assembled InAs/GaAs quantum dot ensembles, formed by substrate misorientation. Ground-state radiative recombination lifetimes from 0.8 to 5.3 ns in the incident power density range of 0.05–3400 W cm[sup -2] at a temperature of 77 K have been obtained. It was found that a reduction of the quantum dot size led to a corresponding reduction of the radiative lifetime. The evident biexponential decay was obtained for the ground state emission of the quantum dot array, with the slower second component attributed to a carrier recapturing process. © 2004 American Institute of Physics.


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