Time-resolved analysis of the white photoluminescence from SiO[sub 2] films after Si and C coimplantation

Pellegrino, P.; Pérez-Rodriguez, A.; Garrido, B.; González-Varona, O.; Morante, J. R.; Marcinkevičcius, S.; Galeckas, A.; Linnros, J.
January 2004
Applied Physics Letters;1/5/2004, Vol. 84 Issue 1, p25
Academic Journal
The analysis of the white photoluminescence (PL) from Si[sup +] and C[sup +] coimplanted SiO[sub 2] is reported as a function of the implanted dose. By both steady and time-resolved measurements, the presence of several components in the emission between 2 and 3.3 eV has been resolved. The decays of the PL transients are characterized by short lifetimes, below 2 ns. For the emission at 2.1–2.3 eV, photoluminescence decay transients have been measured, obtaining a fast relaxation component of about 50–70 ps, followed by a slower component of the order of 1 ns. These values contrast with the very slow behavior, characteristic for the light emission from Si nanocrystals, and make carbon-related emitting centers interesting for optoelectronic applications where fast switching behavior is important. © 2004 American Institute of Physics.


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