Thermal stability and decomposition of the HfO[sub 2]–Al[sub 2]O[sub 3] laminate system

Chang, Hyo Sik; Hwang, Hyunsang; Cho, Mann-Ho; Moon, Dae Won; Doh, Seok Joo; Lee, Jong Ho; Lee, Nae-In
January 2004
Applied Physics Letters;1/5/2004, Vol. 84 Issue 1, p28
Academic Journal
The thermal stability of the HfO[sub 2]–Al[sub 2]O[sub 3] laminate gate stack grown by atomic layer chemical vapor deposition was investigated using medium-energy ion scattering spectroscopy and high-resolution x-ray photoelectron spectroscopy. The laminate structure was maintained up to 800 °C under ultrahigh vacuum conditions, while it was drastically degraded at 850 °C, resulting in silicide formation on the film surface. Dissociated oxygen in the Hf–Al-oxide preferentially diffuses out through the film and desorbing at the surface. Volatile SiO species and Al–O components desorb through the sample surface, while HfO[sub 2] contributes to Hf silicide formation on the film surface. © 2004 American Institute of Physics.


Related Articles

  • Growth of ultrathin ZrO2 films on Si(100): Film-thickness-dependent band alignment. Sandell, A.; Karlsson, P. G.; Richter, J. H.; Blomquist, J.; Uvdal, P.; Grehk, T. M. // Applied Physics Letters;3/27/2006, Vol. 88 Issue 13, p132905 

    The band alignment of ultrathin ZrO2 films of different thickness formed on Si(100) have been monitored with synchrotron radiation photoelectron spectroscopy and x-ray absorption spectroscopy. The films were deposited sequentially by way of metal-organic chemical-vapor deposition in ultrahigh...

  • Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces. Hartlieb, P. J.; Roskowski, A.; Davis, R. F.; Platow, W.; Nemanich, R. J. // Journal of Applied Physics;1/15/2002, Vol. 91 Issue 2, p732 

    Characterization of chemical vapor cleaned, Mg-doped, p-type GaN(0001) surfaces and Pd contacts sequentially deposited on these surfaces has been conducted using x-ray and ultraviolet photoelectron spectroscopies and low-energy electron diffraction. The band bending and the electron affinity at...

  • Influence of nitrogen additions on hot-filament chemical vapor deposition of diamond. Bohr, S.; Haubner, R. // Applied Physics Letters;2/19/1996, Vol. 68 Issue 8, p1075 

    Examines the effects of nitrogen on diamond layers grown by hot-filament chemical vapor deposition. Improvement of the diamond phase purity due to nitrogen additions; Calculations made using the concept of thermodynamic equilibrium; Discussion on crystal quality and orientation.

  • Metalorganic chemical vapor deposition of tantalum nitride by.... Tsai, M.H.; Sun, S.C. // Applied Physics Letters;8/21/1995, Vol. 67 Issue 8, p1128 

    Examines the metalorganic chemical vapor deposition (CVD) of tantalum nitride by precursor tertbutylimidotris(diethylamido)tantalum. Use of x-ray photoelectron spectroscopy to determine carbon and oxygen concentrations; Presence of polycrystalline structures; Effectiveness of CVD to lower...

  • Measurement of atomic indium during metalorganic chemical vapor deposition. Hebner, G. A.; Killeen, K. P. // Journal of Applied Physics;2/1/1990, Vol. 67 Issue 3, p1598 

    Reports on a gas phase observation of atomic indium produced by the pyrolysis of trimethylindium in a hydrogen carrier using resonant fluorescence spectroscopy. Importance of understanding the decomposition pathways of the metalorganic precursors used for metalorganic chemical vapor deposition;...

  • Quantitative study of nitridated sapphire surfaces by x-ray photoelectron spectroscopy. Hashimoto, Tadao; Terakoshi, Yoshitami // Journal of Applied Physics;10/1/1999, Vol. 86 Issue 7, p3671 

    Presents information on a study which described the characteristics of an amorphous oxynitride layer formed by nitridation with x-ray photoelectron spectroscopy. Theoretical model; Role of nitridation in metalorganic chemical vapor deposition; Experimental procedure; Results and discussion;...

  • In situ characterization of diamond nucleation and growth. Belton, David N.; Harris, Stephen J.; Schmieg, Steven J.; Weiner, Anita M.; Perry, Thomas A. // Applied Physics Letters;1/30/1989, Vol. 54 Issue 5, p416 

    Filament-assisted chemical vapor deposition (CVD) diamond film growth on Si(100) was studied using x-ray photoelectron spectroscopy (XPS) to examine the sample at selected intervals during the nucleation and growth processes. The sample was transferred under vacuum from the growth chamber to the...

  • Effects of oxygen on diamond growth using platinum substrates. Belton, David N.; Schmieg, Steven J. // Journal of Applied Physics;3/1/1991, Vol. 69 Issue 5, p3032 

    Focuses on a study which examined the effect of gas phase oxygen on chemical vapor deposition diamond growth on platinum substrates. Use of x-ray photoelectron spectroscopy; Decomposition of surface contaminants; Conversion of graphitic species to stable hydrocarbon species.

  • X-ray photoelectron spectroscopic studies of chemical vapor deposition with TaF5 precursor on polyimide surfaces. Ugolini, D.; Kowalczyk, S. P.; McFeely, F. R. // Journal of Applied Physics;11/15/1992, Vol. 72 Issue 10, p4912 

    Presents information on a study which examined the findings of an in-situ x-ray photoelectron spectroscopy on the growth of tantalum films on polyimide by chemical vapor deposition. Description of the spectroscopy process; Methodology of the study; Results and discussion.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics