TITLE

Thermal stability and decomposition of the HfO[sub 2]–Al[sub 2]O[sub 3] laminate system

AUTHOR(S)
Chang, Hyo Sik; Hwang, Hyunsang; Cho, Mann-Ho; Moon, Dae Won; Doh, Seok Joo; Lee, Jong Ho; Lee, Nae-In
PUB. DATE
January 2004
SOURCE
Applied Physics Letters;1/5/2004, Vol. 84 Issue 1, p28
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The thermal stability of the HfO[sub 2]–Al[sub 2]O[sub 3] laminate gate stack grown by atomic layer chemical vapor deposition was investigated using medium-energy ion scattering spectroscopy and high-resolution x-ray photoelectron spectroscopy. The laminate structure was maintained up to 800 °C under ultrahigh vacuum conditions, while it was drastically degraded at 850 °C, resulting in silicide formation on the film surface. Dissociated oxygen in the Hf–Al-oxide preferentially diffuses out through the film and desorbing at the surface. Volatile SiO species and Al–O components desorb through the sample surface, while HfO[sub 2] contributes to Hf silicide formation on the film surface. © 2004 American Institute of Physics.
ACCESSION #
11805690

 

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