Localization versus field effects in single InGaN quantum wells

Bell, A.; Christen, J.; Bertram, F.; Ponce, F. A.; Marui, H.; Tanaka, S.
January 2004
Applied Physics Letters;1/5/2004, Vol. 84 Issue 1, p58
Academic Journal
The optical properties of In[sub x]Ga[sub 1-x]N quantum wells (x=0.13) have been studied by cathodoluminescence (CL) spectroscopy. A blueshift of the quantum well emission is observed with increasing excitation density, which can be explained by considering (a) band filling of in-plane potential fluctuations caused by compositional inhomogeneities, or (b) screening of piezoelectric fields inside the well. We have used time-resolved CL spectroscopy to distinguish between the two effects. The onset and decay of the relaxation and recombination kinetics are measured by using rectangular excitation pulses with ultrafast on and off switching and with pulse lengths sufficiently long to ensure excitation into quasi-steady-state conditions. For well widths of L[sub z]≤6 nm, a redshift is observed after the electron beam is switched on and a further redshift occurs after the electron beam is switched off. For L[sub z]>=8 nm, a blueshift is observed after the electron beam is switched on and a redshift is observed after the electron beam is switched off. We attribute the different behaviors to the dominance of localization effects for L[sub z]≤6 nm and the dominance of field effects for L[sub z]>=8 nm. © 2004 American Institute of Physics.


Related Articles

  • Determination of the piezoelectric field in InGaN quantum wells. Brown, I. H.; Pope, I. A.; Smowton, P. M.; Blood, P.; Thomson, J. D.; Chow, W. W.; Bour, D. P.; Kneissl, M. // Applied Physics Letters;3/28/2005, Vol. 86 Issue 13, p131108 

    In many studies, the value of the experimentally determined internal piezoelectric field has been reported to be significantly smaller than theoretical values. We believe this is due to an inappropriate approximation for the electric field within the depletion region, which is used in the...

  • Effect of an electron blocking layer on the piezoelectric field in InGaN/GaN multiple quantum well light-emitting diodes. Lee, Dong-Yul; Han, Sang-Heon; Lee, Dong-Ju; Wook Lee, Jeong; Kim, Dong-Joon; Sun Kim, Young; Kim, Sung-Tae // Applied Physics Letters;1/23/2012, Vol. 100 Issue 4, p041119 

    We report the effect of an electron blocking layer (EBL) on the piezoelectric field in InGaN/GaN multiple quantum well light-emitting diodes (LEDs). Electric-field-dependent ER measurements showed an enhanced piezoelectric field in LEDs with a p-AlGaN EBL compared with LEDs without EBL. In...

  • Electroreflectance spectra of InGaN/AlGaN/GaN quantum-well heterostructures. Avakyants, L. P.; Badgutdinov, M. L.; Bokov, P. Yu.; Chervyakov, A. V.; Shirokov, S. S.; Yunovich, A. E.; Bogdanov, A. A.; Vasil’eva, E. D.; Nikolaev, D. A.; Feopentov, A. V. // Semiconductors;Sep2007, Vol. 41 Issue 9, p1060 

    p− n InGaN/AlGaN/GaN heterostructures with InGaN/AlGaN multiple quantum wells are studied by electroreflectance spectroscopy. The structures are grown by metal—organic epitaxy and arranged with the p region in contact with the heat sink. Light is incident on and reflected from the...

  • Piezoelectric field effects InGaAs (111)B quantum wells. Chen, X.; Molloy, C.H. // Applied Physics Letters;9/4/1995, Vol. 67 Issue 10, p1393 

    Examines the existence of piezoelectric field in low temperature (10 K) photoluminescence spectra and photoluminescence decay data for both (100) and (111)B InGaAs quantum wells sample. Variation of the e-hh transition energy; Separation of electrons and holes in the triangular wells; Reduction...

  • Carrier dynamics and electrostatic potential variation in InGaN quantum wells grown on [formula] GaN pyramidal planes. Srinivasan, S.; Stevens, M.; Ponce, F. A.; Omiya, H.; Mukai, T. // Applied Physics Letters;12/4/2006, Vol. 89 Issue 23, p231908 

    InGaN quantum wells grown in the conventional [0001] direction are known to exhibit long carrier lifetimes that are attributed to strong internal electric fields due to spontaneous and piezoelectric polarization. These fields are expected to be considerably reduced in other crystal geometries....

  • Cathodoluminescence and transmission electron microscopy study of dark line defects in thick In0.2Ga0.8As/GaAs multiple quantum wells. Rich, D. H.; George, T.; Pike, W. T.; Maserjian, J.; Grunthaner, F. J.; Larsson, A. // Journal of Applied Physics;12/15/1992, Vol. 72 Issue 12, p5834 

    Presents a study which investigated the spatial distribution of the long-wavelength luminescence in thick multiple quantum wells using cathodoluminescence imaging and spectroscopy. Indication of the large spatial variation of the luminescence intensities; Applications of the molecular beam...

  • Determination of built-in electric fields in quaternary InAlGaN heterostructures. Teisseyre, H.; Suski, T.; Łepkowski, S. P.; Anceau, S.; Perlin, P.; Lefebvre, P.; Konczewicz, L.; Hirayama, H.; Aoyagi, Y. // Applied Physics Letters;3/10/2003, Vol. 82 Issue 10, p1541 

    A study of internal electric field contribution to the light emission mechanism of InAlGaN based multiquantum wells was performed. To determine the magnitude of the built-in electric field we employed: (i) theoretical estimation of the piezoelectric and spontaneous polarizations, (ii) analysis...

  • P-n and p-n-p junction arrays in CulnSe2 crystals: Cathodoluminescence and capacitance study. Medvedkin, G.A.; Sobolev, M.M.; Solovjev, S. A. // Journal of Applied Physics;11/15/1997, Vol. 82 Issue 10, p5167 

    Studies the microstructures in p-CuInSe2 single crystals tailored by a strong electric field. Use of the two-stage resistive model for p-n and p-n-p junction formation; Experimental conditions for obtaining the cathadoluminescence spectra.

  • Optical characterization of nonuniform electric fields in multiple quantum well diodes. Little, J. W.; Leavitt, R. P.; Ovadia, Shlomo; Lee, Chi H. // Applied Physics Letters;7/10/1989, Vol. 55 Issue 2, p173 

    Low-temperature photocurrent and photoluminescence spectroscopies have been used to quantify the effects of electric field nonuniformities (on the order of 100 kV/cm) within the ∼1-μm-thick intrinsic regions of GaAs/AlGaAs multiple quantum well p-i-n photodiodes. The smearing out of...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics