TITLE

Magnetic bipolar transistor

AUTHOR(S)
Fabian, Jaroslav; Žutić, Igor; Das Sarma, S.
PUB. DATE
January 2004
SOURCE
Applied Physics Letters;1/5/2004, Vol. 84 Issue 1, p85
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A magnetic bipolar transistor is a bipolar junction transistor with one or more magnetic regions, and/or with an externally injected nonequilibrium (source) spin. It is shown that electrical spin injection through the transistor is possible in the forward active regime. It is predicted that the current amplification of the transistor can be tuned by spin. © 2004 American Institute of Physics.
ACCESSION #
11805671

 

Related Articles

  • Low turn-on voltage GaAs heterojunction bipolar transistors with a pseudomorphic GaAsSb base. Oka, Tohru; Mishima, Tomoyoshi; Kudo, Makoto // Applied Physics Letters;1/22/2001, Vol. 78 Issue 4, p483 

    We have developed GaAs heterojunction bipolar transistors (HBTs) with low turn-on voltage by using pseudomorphic GaAsSb as the base layer. The turn-on voltage of GaAs/GaAs[sub 0.91]Sb[sub 0.09] HBT is 0.10 V lower than that of InGaP/GaAs HBT. The lower turn-on voltage is attributed to the...

  • What's All This PNP Stuff, Anyhow? Pease, Bib // Electronic Design;9/11/2008, Vol. 56 Issue 18, p80 

    The author offers a perspective on how to take advantage of a PNP transistor, despite its poor characteristics compared to an NPN transistor. He relates that one way to replace a PNP Darlington transistor is to use one PNP and one NPN. He stresses that such method had some advantages like a...

  • Basic Electronics: A Look at Transistors. Hill, Jonathan // Biomedical Instrumentation & Technology;Jan/Feb2006, Vol. 40 Issue 1, p47 

    Focuses on the basic positive-negative-positive and the negative-positive-negative transistor. Explanation on how to troubleshoot transistors; Information on the bipolar or junction transistors; Role of transistors in electronic equipment.

  • Electron counting at room temperature in an avalanche bipolar transistor. Lany, Marc; Boero, Giovanni; Popovic, Radivoje // Applied Physics Letters;1/14/2008, Vol. 92 Issue 2, p022111 

    We report on real-time detection of single electrons inside a n-p-n bipolar junction transistor at room temperature. Single electrons injected through the base-emitter junction trigger with a high probability the avalanche breakdown of the strongly reverse-biased collector-base junction. The...

  • Calculation of the base current components and determination of their relative importance in AlGaAs/GaAs and InAlAs/InGaAs heterojunction bipolar transistors. Liou, J. J. // Journal of Applied Physics;3/1/1991, Vol. 69 Issue 5, p3328 

    Calculates all components of the base current density in InAlAs/InGaAs and AlGaAs/GaAs heterojunction bipolar transistors having abrupt junctions for a wide range of bias conditions and device parameters. Effects of the junction of grading and base grading on the base current components;...

  • Microcontroller drives H bridge to power a permanent-magnet dc motor. Bruno, Luca // EDN;3/15/2007, Vol. 52 Issue 6, p78 

    The article presents an alternative circuit that drives H-bridge to power a permanent-magnet direct current motor. The traditional method involves using four metal oxide semiconductor field-effect transistors or bipolar transistors in an H-bridge scheme. The improved H-bridge-driver circuits...

  • Design of Miniature Dual Exponential Pulse Source Using EMC Experiment. Zhao Min; Zhou Xing; Wang Qing-guo; Yang Qing-xi // Advanced Materials Research;2014, Issue 926-930, p407 

    Based on avalanche effect of avalanche transistor, Marx circuit configuration is adopted, trigger circuit and PCB layout are described in detail, the selection of trigger pulse is analyzed. The 10-stages all-solid-state pulse source is designed based on Marx circuit with avalanche transistor....

  • Photoreflectance study of thermal degradation of n-InP/p[sup +]-InGaAs heterojunctions. Sugiyama, Hiroki; Watanabe, Noriyuki; Watanabe, Kazuo; Kobayashi, Takashi // Journal of Applied Physics;4/1/2001, Vol. 89 Issue 7 

    The thermal stability of n-InP/p[sup +]-InGaAs heterojunctions was studied using photoreflectance (PR) spectroscopy. The PR signal amplitude from the n-InP depletion region decreased after postgrowth annealing. The reduction of the PR signal amplitude reflected an increase of recombination...

  • Model for a thin-film silicon-on-sapphire bipolar junction transistor. Benumof, Reuben // Journal of Applied Physics;4/15/1985, Vol. 57 Issue 8, p2936 

    Presents a study that modified the Gummel-Poon model to serve as a basis for the design of a lateral thin-film silicon-on-sapphire bipolar junction transistor. Diagram of the Gummel-Poon model for a discrete junction transistor; Discussion of the recombination of electrons and holes;...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics