TITLE

Stability and band offsets of nitrogenated high-dielectric-constant gate oxides

AUTHOR(S)
Shang, G.; Peacock, P. W.; Robertson, J.
PUB. DATE
January 2004
SOURCE
Applied Physics Letters;1/5/2004, Vol. 84 Issue 1, p106
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We find that addition of nitrogen to high-dielectric-constant gate oxides such as HfO[sub 2], La[sub 2]O[sub 3], and silicates adds gap states up to 1.2 eV above their valence-band edge. This reduces the valence-band offset, but not by enough to reduce the hole injection barrier to unsafe levels. Nitrogen also leads to a decrease in average atomic coordination, which may help to increase their resistance to crystallization and ability to withstand high temperature processing. © 2004 American Institute of Physics.
ACCESSION #
11805664

 

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