Silicon oxide thickness-dependent growth of carbon nanotubes

Cao, Anyuan; Ajayan, P. M.; Ramanath, G.; Baskaran, R.; Turner, K.
January 2004
Applied Physics Letters;1/5/2004, Vol. 84 Issue 1, p109
Academic Journal
Recent discovery of substrate-selective growth of carbon nanotubes on SiO[sub 2] in exclusion to Si, has opened up the possibility of organizing nanotubes on Si/SiO[sub 2] patterns in premeditated configurations for building devices. Here, we report the strong dependence of nanotube growth on the SiO[sub 2] layer thickness, and the utility of this feature to build three-dimensional architectures. Our results show that there is no detectable nanotube growth on SiO[sub 2] layers with thickness (T[sub SiO[sub 2]]) less than ∼5–6 nm. For 6 nm50 nm. We grew nanotubes with multiple lengths at close proximity in a single step by using substrates with regions of different T[sub SiO[sub 2]]. Such processing strategies would be attractive for creating nanotube mesoscale architectures for device applications. © 2004 American Institute of Physics.


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