TITLE

High-efficiency solar cells on edge-defined film-fed grown (18.2%) and string ribbon (17.8%) silicon by rapid thermal processing

AUTHOR(S)
Rohatgi, A.; Kim, D. S.; Nakayashi, K.; Yelundur, V.; Rounsaville, B.
PUB. DATE
January 2004
SOURCE
Applied Physics Letters;1/5/2004, Vol. 84 Issue 1, p145
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Solar cell efficiencies of 18.2 and 17.8% were achieved on edge-defined film-fed grown and string ribbon multicrystalline silicon, respectively. Improved understanding and hydrogenation of defects in ribbon materials contributed to the significant increase in bulk lifetime from 1–5 μs to as high as 90–100 μs during cell processing. It was found that SiN[sub x]-induced defect hydrogenation in these ribbon materials takes place within one second at 740–750 °C. The bulk lifetime decreases at annealing temperatures above 750 °C or annealing times above one second due to the enhanced dissociation of the hydrogenated defects coupled with the decrease in hydrogen supply from the SiN[sub x] film deposited by plasma enhanced chemical vapor deposition. © 2004 American Institute of Physics.
ACCESSION #
11805651

 

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