Light-emitting transistor: Light emission from InGaP/GaAs heterojunction bipolar transistors

Feng, M.; Holonyak Jr., N.; Hafez, W.
January 2004
Applied Physics Letters;1/5/2004, Vol. 84 Issue 1, p151
Academic Journal
This letter reports the direct observation of the radiative recombination in the graded base layer of InGaP/GaAs heterojunction bipolar transistors (HBTs). For a 1 μm×16 μm emitter HBT, we demonstrate the change of the spontaneous light emission intensity (ΔI[sub out]) as the base current (Δi[sub b]) of the HBT is varied from 0 to 5 mA, i.e., an HBT operating as a light-emitting transistor. We also demonstrate output light modulation from the base layer at 1 MHz with the base current modulated at 1 MHz in normal transistor mode operation of the HBT. © 2004 American Institute of Physics.


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