TITLE

Strong coupling in high-finesse organic semiconductor microcavities

AUTHOR(S)
Connolly, L.G.; Lidzey, D.G.; Butté, R.; Adawi, A.M.; Whittaker, D.M.; Skolnick, M.S.; Airey, R.
PUB. DATE
December 2003
SOURCE
Applied Physics Letters;12/29/2003, Vol. 83 Issue 26, p5377
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report the fabrication of high-finesse strongly coupled microcavities composed of a polystyrene film doped with the dye tetraphenyl–porphyrin zinc positioned between two high reflectivity dielectric mirrors. The bottom mirror was deposited by plasma enhanced chemical vapor deposition, and was composed of 11 λ/4 thick (silicon oxide/silicon nitride) pairs. The organic layer was deposited on to this by spin coating. Finally, the top mirror was deposited by thermal evaporation and consisted of 12 λ/4 thick (tellurium oxide/lithium fluoride) pairs. Such cavities are characterized by Q factors of between 440 and 620. Strong coupling was evidenced via white light reflectivity measurements. Due to the high cavity Q factor, a Rabi splitting of 135 meV at resonance was very clearly resolved. © 2003 American Institute of Physics.
ACCESSION #
11753300

 

Related Articles

  • Surface potential profiling and contact resistance measurements on operating pentacene thin-film transistors by Kelvin probe force microscopy. Puntambekar, Kanan P.; Pesavento, Paul V.; Frisbie, C. Daniel // Applied Physics Letters;12/29/2003, Vol. 83 Issue 26, p5539 

    Surface potentials of operating pentacene thin-film transistors (TFTs) with two different contact geometries (bottom or top) were mapped by Kelvin probe force microscopy (KFM). The surface potential distribution was used to isolate the potential drops at the source and drain contacts. These...

  • Structure, bonding, and band offsets of (100)SrTiO[sub 3]–silicon interfaces. Peacock, P.W.; Robertson, J. // Applied Physics Letters;12/29/2003, Vol. 83 Issue 26, p5497 

    We derive rules for bonding at interfaces between Si and ionic oxides so that they satisfy valence requirements and give a defect-free interface. These rules are used to analyze epitaxial interfaces of SrTiO[sub 3] on (100)Si. The band offsets are found from the local density of states and it is...

  • Direct evidence for Sb as a Zn site impurity in ZnO. Wahl, U.; Correia, J. G.; Mendonça, T.; Decoster, S. // Applied Physics Letters;6/29/2009, Vol. 94 Issue 26, p261901 

    The lattice location of ion implanted antimony in zinc oxide has been determined by means of β- emission channeling from the radioactive 124Sb isotope. Following 30 keV implantation of 124Sb into a single-crystalline ZnO sample to a fluence of 1×1014 cm-2, the angular-dependent emission...

  • Surface-plasmon-mediated emission from metal-capped ZnO thin films. Lai, C. W.; An, J.; Ong, H. C. // Applied Physics Letters;6/20/2005, Vol. 86 Issue 25, p251105 

    The effects of metal coating on the near-band-edge emission of ZnO thin films have been studied by photoluminescence and atomic force microscopy. Large enhancement in emission intensity has been observed from ZnO films when they are capped by Ag while negligible effect is seen on Au-coated...

  • Stimulated emission in nanocrystalline silicon superlattices. Ruan, J.; Fauchet, P.M.; Dal Negro, L.; Cazzanelli, M.; Pavesi, L. // Applied Physics Letters;12/29/2003, Vol. 83 Issue 26, p5479 

    We studied the conditions under which optical gain is measured in nanocrystalline silicon (nc-Si) using the variable stripe length method. Waveguide samples have been produced by magnetron sputtering of alternating layers of Si and SiO[sub 2], followed by high temperature annealing. No optical...

  • S–d exchange interaction in GaN:Mn studied by electron paramagnetic resonance. Wolos, Agnieszka; Palczewska, Maria; Wilamowski, Zbyslaw; Kaminska, Maria; Twardowski, Andrzej; Bockowski, Michal; Grzegory, Izabella; Porowski, Sylwester // Applied Physics Letters;12/29/2003, Vol. 83 Issue 26, p5428 

    We present the electron paramagnetic resonance investigations of GaN:Mn bulk crystals. The performed measurements revealed the Korringa scattering as the dominant spin relaxation mechanism in the investigated highly n-type GaN:Mn samples. The temperature dependence of the spin relaxation time...

  • Thermal diffusivity and thermoelectric figure of merit of Al[sub 1-x]In[sub x]N prepared by reactive radio-frequency sputtering. Yamaguchi, Shigeo; Izaki, Ryohei; Yamagiwa, Ken-ichi; Taki, Kyoichiro; Iwamura, Yasuo; Yamamoto, Atsushi // Applied Physics Letters;12/29/2003, Vol. 83 Issue 26, p5398 

    We studied the thermal properties of AlN, InN, and Al[sub 1-x]In[sub x]N films, prepared by reactive sputtering, as a function of the temperature. The results indicated minimum thermal diffusivities of 3.14×10[sup -6] m[sup 2]/s for AlN, 7.65×10[sup -7] m[sup 2]/s for InN,...

  • Electronic states at the interface between thin films of ZnS and crystalline p-silicon. Sands, David; Brunson, Kevin M.; Thomas, Clive B. // Journal of Applied Physics;8/15/1987, Vol. 62 Issue 4, p1340 

    Studies electronic states at the interface between thin films of zinc sulfide and crystalline p-silicon. Measurement of the density of interface states; Similarities between the interface and that between sputtered zinc sulfide; Capacitance-voltage characteristics of aluminum-evaporated zinc...

  • Spin-Coated ZnO Thin Films Using ZnO Nano-Colloid. Sharma, Swati; Tran, Alex; Nalamasu, Omkaram; Dutta, P. S. // Journal of Electronic Materials;Jun2006, Vol. 35 Issue 6, p1237 

    Using ZnO nano-colloids, thin films of ZnO have been deposited and characterized. The nano-colloid has been synthesized using a top-down wet chemistry method starting from submicron ZnO particles. The steric stabilization technique is implemented using stearic acid as a capping agent to prevent...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics