Thermal diffusivity and thermoelectric figure of merit of Al[sub 1-x]In[sub x]N prepared by reactive radio-frequency sputtering

Yamaguchi, Shigeo; Izaki, Ryohei; Yamagiwa, Ken-ichi; Taki, Kyoichiro; Iwamura, Yasuo; Yamamoto, Atsushi
December 2003
Applied Physics Letters;12/29/2003, Vol. 83 Issue 26, p5398
Academic Journal
We studied the thermal properties of AlN, InN, and Al[sub 1-x]In[sub x]N films, prepared by reactive sputtering, as a function of the temperature. The results indicated minimum thermal diffusivities of 3.14×10[sup -6] m[sup 2]/s for AlN, 7.65×10[sup -7] m[sup 2]/s for InN, 7.53×10[sup -7] m[sup 2]/s for Al[sub 0.57]In[sub 0.43]N, and 7.03×10[sup -7] m[sup 2]/s for Al[sub 0.28]In[sub 0.72]N. We estimated the dimensionless thermoelectric figure of merit to be 0.1 for Al[sub 0.28]In[sub 0.72]N at 873 K. © 2003 American Institute of Physics.


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