Clusters formation in ultralow-energy high-dose boron-implanted silicon

Cristiano, F.; Hebras, X.; Cherkashin, N.; Claverie, A.; Lerch, W.; Paul, S.
December 2003
Applied Physics Letters;12/29/2003, Vol. 83 Issue 26, p5407
Academic Journal
The formation and evolution of small cluster defects in 500 eV, 1×10[sup 15] cm[sup -2] boron-implanted silicon is investigated. These clusters are identified by high-resolution transmission electron microscopy (TEM) as small dislocation loops lying on {100} planes with an interstitial character. Weak-beam dark-field TEM analysis shows that, during annealing at 650 °C, they evolve following an Ostwald ripening mechanism. Spike anneals at high temperatures make them dissolve but an immobile boron peak is still detected in the secondary ion mass spectroscopy profiles. Upon oxidation, the average size of the clusters increases, while boron electrical deactivation occurs. These results strongly indicate that the observed clusters contain both boron interstitials and silicon self-interstitials atoms. © 2003 American Institute of Physics.


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