Electron-beam-induced strain within InGaN quantum wells: False indium “cluster” detection in the transmission electron microscope

Smeeton, T.M.; Kappers, M.J.; Barnard, J.S.; Vickers, M.E.; Humphreys, C.J.
December 2003
Applied Physics Letters;12/29/2003, Vol. 83 Issue 26, p5419
Academic Journal
InGaN quantum wells have been found to be extremely sensitive to exposure to the electron beam in the transmission electron microscope (TEM). High-resolution TEM images acquired immediately after first irradiating a region of quantum well indicates no gross fluctuations of indium content in the InGaN alloy. During only a brief period of irradiation, inhomogeneous strain is introduced in the material due to electron beam damage. This strain is very similar to that expected from genuine nanometer-scale indium composition fluctuations which suggests there is the possibility of falsely detecting indium-rich “clusters” in a homogeneous quantum well. © 2003 American Institute of Physics.


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