TITLE

Electron-beam-induced strain within InGaN quantum wells: False indium “cluster” detection in the transmission electron microscope

AUTHOR(S)
Smeeton, T.M.; Kappers, M.J.; Barnard, J.S.; Vickers, M.E.; Humphreys, C.J.
PUB. DATE
December 2003
SOURCE
Applied Physics Letters;12/29/2003, Vol. 83 Issue 26, p5419
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
InGaN quantum wells have been found to be extremely sensitive to exposure to the electron beam in the transmission electron microscope (TEM). High-resolution TEM images acquired immediately after first irradiating a region of quantum well indicates no gross fluctuations of indium content in the InGaN alloy. During only a brief period of irradiation, inhomogeneous strain is introduced in the material due to electron beam damage. This strain is very similar to that expected from genuine nanometer-scale indium composition fluctuations which suggests there is the possibility of falsely detecting indium-rich “clusters” in a homogeneous quantum well. © 2003 American Institute of Physics.
ACCESSION #
11753286

 

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