TITLE

Optical excitation of Er ions with 1.5 μm luminescence via the luminescent state in Si nanocrystallites embedded in SiO[sub 2] matrices

AUTHOR(S)
Makimura, Tetsuya; Kondo, Keiichi; Uematsu, Hiroshi; Changqing Li; Murakami, Kouichi
PUB. DATE
December 2003
SOURCE
Applied Physics Letters;12/29/2003, Vol. 83 Issue 26, p5422
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Optical excitation bands have been investigated for Er-doped SiO[sub 2] films, including Si nanocrystallites as sensitizers. The Er-doped films with photoluminescence at 1.5 μm were fabricated using a laser ablation technique. It is found that the major continuous portion of the excitation bands for Er ions completely coincides with that of Si nanocrystallites at room temperature. Thus, it has been demonstrated that the second indirect absorption band of Si nanocrystallites can be used for efficient excitation of Er ions. The photoluminescence spectroscopy revealed that Er ions are possibly excited from the ground state [sup 4]I[sub 15/2] to the first excited state [sup 4]I[sub 13/2] by the energy transfer from the singlet excitons in Si nanocrystallites. © 2003 American Institute of Physics.
ACCESSION #
11753285

 

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